Silisyum karb\u00fcr veya SiC, baz\u0131 benzersiz elektriksel \u00f6zelliklere sahip son derece g\u00fc\u00e7l\u00fc ve dayan\u0131kl\u0131 bir malzemedir.<\/p>\n
Kristalin karbon, kovalent olarak birbirine ba\u011flanm\u0131\u015f yo\u011fun paketlenmi\u015f yap\u0131lar halinde kristalle\u015firken bulunabilir. Atomlar\u0131, her k\u00f6\u015fesinde d\u00f6rt karbon ve d\u00f6rt silikon atomu bulunan iki birincil koordinasyon tetrahedras\u0131 olu\u015fturur ve bunlar k\u00f6\u015felerinden ba\u011flanarak politip ad\u0131 verilen \u00e7ok tipli yap\u0131lar olu\u015fturur.<\/p>\n
Silisyum karb\u00fcr, Mohs sertlik derecesi 9 ile 10 aras\u0131nda olan ve al\u00fcmina ile elmas aras\u0131nda bir yerde bulunan son derece sert bir malzemedir. Silisyum karb\u00fcr, modern ta\u015f i\u015f\u00e7ili\u011finde, ta\u015flama ve i\u015fleme operasyonlar\u0131nda, end\u00fcstriyel f\u0131r\u0131nlar i\u00e7in refrakter astar olarak, kesici aletlerde, pompalar\u0131n ve roket motorlar\u0131n\u0131n a\u015f\u0131nmaya dayan\u0131kl\u0131 par\u00e7alar\u0131n\u0131n yan\u0131 s\u0131ra kaykaylarda a\u015f\u0131nmaya dayan\u0131kl\u0131 kavrama band\u0131 olarak ve karborundum bask\u0131 yap\u0131m\u0131nda a\u015f\u0131nd\u0131r\u0131c\u0131 bir malzeme olarak geni\u015f kullan\u0131m alan\u0131 bulur - karborundum kumunun bir al\u00fcminyum plakaya uygulanmas\u0131 ve ard\u0131ndan yuvarlanma yatakl\u0131 presler (Mountain) kullan\u0131larak ka\u011f\u0131da bas\u0131lmas\u0131 i\u015flemi.<\/p>\n
Sentetik polikarbonatlar, y\u00fczey dif\u00fczyonunu \u00f6nlemek ve tane s\u0131n\u0131r\u0131 enerjisini de\u011fi\u015ftirmek i\u00e7in sinterleme yard\u0131mc\u0131s\u0131 olarak 0.5% karbon veya 0.5% bor eklenerek geli\u015ftirilmi\u015f reaksiyon ba\u011flama veya sinterleme i\u015flemleri kullan\u0131larak sentetik olarak \u00fcretilebilir (Da\u011f).<\/p>\n
SiC, \u00e7e\u015fitli end\u00fcstriyel ortamlarda \u00e7ok de\u011ferli olmas\u0131n\u0131 sa\u011flayan farkl\u0131 mekanik \u00f6zelliklere sahip etkileyici bir end\u00fcstriyel seramiktir. Y\u00fcksek termal iletkenlik ve d\u00fc\u015f\u00fck termal genle\u015fme oranlar\u0131yla, karasal elektrikli ara\u00e7 tahrik sistemleri i\u00e7in g\u00fc\u00e7 elektroni\u011finde kullan\u0131m\u0131 her zamankinden daha yayg\u0131n hale gelmi\u015ftir. Ayr\u0131ca SiC'nin elektriksel \u00f6zellikleri, elektrikli ara\u00e7lar i\u00e7in \u00e7eki\u015f invert\u00f6rleri ve \u015farj istasyonlar\u0131 i\u00e7in DC\/DC d\u00f6n\u00fc\u015ft\u00fcr\u00fcc\u00fcler gibi daha y\u00fcksek voltaj uygulamalar\u0131nda geleneksel silikon yar\u0131 iletkenlerin yerini alabilir.<\/p>\n
Silisyum karb\u00fcr, n-tipi yar\u0131 iletkenler olu\u015fturmak i\u00e7in azot ve fosfor ile katk\u0131lanabilirken, p-tipi olanlar yapmak i\u00e7in i\u00e7ine berilyum, bor, al\u00fcminyum ve galyum katk\u0131lanabilir. Yak\u0131n paketlenmi\u015f ve simetrik yap\u0131s\u0131 nedeniyle silisyum karb\u00fcr, katk\u0131lama i\u00e7in ideal bir platform sa\u011flar.<\/p>\n
Refrakter malzeme sert, k\u0131r\u0131lgan ve termal olarak iletkendir. Y\u00fcksek s\u0131cakl\u0131klara ve gerilimlere dayanabilirken, d\u00fc\u015f\u00fck termal genle\u015fme katsay\u0131s\u0131, s\u0131cakl\u0131k de\u011fi\u015fimlerine maruz kalan uygulamalar i\u00e7in kullan\u0131ld\u0131\u011f\u0131nda avantajlar sunar.<\/p>\n
Do\u011fal mozanit (Csi3SiO6) meteoritlerde ve kimberlitte bulunabilse de g\u00fcn\u00fcm\u00fczde sat\u0131lan \u00e7o\u011fu silisyum karb\u00fcr sentetiktir. Ye\u015filden siyaha kristal tanelerden g\u00fc\u00e7 elektroni\u011fi uygulamalar\u0131 i\u00e7in kullan\u0131lan alt\u0131 in\u00e7lik SiC gofretlere kadar bir\u00e7ok formda bulunur ve hidroflorik ve s\u00fclf\u00fcrik asitler hari\u00e7 organik asitler ve alkalilerden kaynaklanan korozyona kar\u015f\u0131 diren\u00e7li oldu\u011fu i\u00e7in kimyasal olarak inerttir; suda veya di\u011fer \u00e7\u00f6z\u00fcc\u00fclerde \u00e7\u00f6z\u00fcnmez, ancak NaOH veya KOH gibi erimi\u015f alkalilerde \u00e7\u00f6z\u00fcn\u00fcr.<\/p>\n
Silisyum karb\u00fcr (SiC), metaller (elektri\u011fi ileten) ve yal\u0131tkanlar (iletmeyen) aras\u0131nda yer alan yar\u0131 iletken bir malzemedir. SiC'nin elektriksel \u00f6zellikleri s\u0131cakl\u0131\u011fa ve bile\u015fimindeki safs\u0131zl\u0131klara ba\u011fl\u0131d\u0131r: d\u00fc\u015f\u00fck s\u0131cakl\u0131klarda bir yal\u0131tkan gibi davran\u0131r; daha y\u00fcksek s\u0131cakl\u0131klarda iletkenli\u011fi fark edilir hale gelir. SiC iletkenli\u011fi, serbest y\u00fck ta\u015f\u0131y\u0131c\u0131lar\u0131n\u0131 art\u0131ran ve SiC'yi P tipi yar\u0131 iletkene d\u00f6n\u00fc\u015ft\u00fcren al\u00fcminyum, bor veya galyum safs\u0131zl\u0131klar\u0131 eklenerek daha da geli\u015ftirilebilir.<\/p>\n
Kilin fiziksel ve kimyasal \u00f6zelliklerinin kombinasyonu, a\u015f\u0131nma direncini ve fren mukavemetini art\u0131ran seramik plakalardan, y\u00fcksek s\u0131cakl\u0131k uygulamalar\u0131nda kullan\u0131lmas\u0131na olanak tan\u0131yan y\u00fcksek \u0131s\u0131 iletkenli\u011fi ve d\u00fc\u015f\u00fck genle\u015fme katsay\u0131s\u0131na kadar \u00e7e\u015fitli end\u00fcstrilerde onu \u00e7ekici bir malzeme haline getirmektedir.<\/p>\n
Ayr\u0131ca, benzersiz bant aral\u0131\u011f\u0131, geleneksel silikon bazl\u0131 elektroniklerden daha y\u00fcksek voltaj ve frekanslarda \u00e7al\u0131\u015fmas\u0131na izin vererek diyotlar, transist\u00f6rler ve trist\u00f6rler gibi g\u00fc\u00e7 cihazlar\u0131 i\u00e7in m\u00fckemmel bir malzeme olmas\u0131n\u0131 sa\u011flar.<\/p>\n
Silisyum karb\u00fcr (SiC) \u00fcst\u00fcn termal \u00f6zelliklere sahip inorganik bir seramiktir ve bir\u00e7ok farkl\u0131 uygulama i\u00e7in uygundur. Silisyum karb\u00fcr, sertli\u011fi nedeniyle a\u015f\u0131nmaya dayan\u0131kl\u0131 par\u00e7alardan ve a\u015f\u0131nd\u0131r\u0131c\u0131lardan; \u0131s\u0131ya kar\u015f\u0131 direnci ve d\u00fc\u015f\u00fck termal genle\u015fmesi nedeniyle refrakterlerde ve seramiklerde; ayr\u0131ca a\u015f\u0131r\u0131 s\u0131cakl\u0131klarda elektri\u011fi iletme kabiliyetinin oldu\u011fu elektroniklerde \u00e7e\u015fitli uygulamalarda kullan\u0131m alan\u0131 bulur.<\/p>\n
SiC, atomlar\u0131n\u0131n yar\u0131s\u0131 silikon ile de\u011fi\u015ftirilmi\u015f elmas k\u00fcbik kristal yap\u0131s\u0131 nedeniyle etkili bir termal iletkendir ve \u00fcst\u00fcn termal iletkenlik sa\u011flar. SiC, elektronlar\u0131n bantlar\u0131 aras\u0131ndaki bu bo\u015flu\u011fu ge\u00e7meleri i\u00e7in a\u015f\u0131r\u0131 miktarda enerji gerektiren yal\u0131tkanlara k\u0131yasla elektronlar\u0131n valans ve iletim bantlar\u0131 aras\u0131nda kolayca hareket etmesini sa\u011flayan etkili bir bant aral\u0131\u011f\u0131na sahiptir.<\/p>\n
SiC'nin kristal yap\u0131s\u0131, \u00e7oklu tipler olarak bilinen \u00e7e\u015fitli bi\u00e7imler alabilir. Her bir \u00e7oklu tip, benzersiz atomik d\u00fczenlemelerle sonu\u00e7lanan belirli istifleme dizilerinde istiflenmi\u015f katmanlardan olu\u015fur - bu, SiC'ye son derece y\u00fcksek bir \u00f6zg\u00fcl \u0131s\u0131 ve d\u00fc\u015f\u00fck termal genle\u015fme katsay\u0131s\u0131 verir.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide, or SiC, is an extremely strong and durable material with some unique electrical properties. Crystalline carbon can be […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[3],"tags":[],"class_list":["post-42","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/posts\/42","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/comments?post=42"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/posts\/42\/revisions"}],"predecessor-version":[{"id":43,"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/posts\/42\/revisions\/43"}],"wp:attachment":[{"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/media?parent=42"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/categories?post=42"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/tr\/wp-json\/wp\/v2\/tags?post=42"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}