Tranzistory MOSFET z karbidu krem\u00edka prekon\u00e1vaj\u00fa tranzistory Si IGBT, pokia\u013e ide o vysokonap\u00e4\u0165ov\u00e9 aplik\u00e1cie, ako s\u00fa inteligentn\u00e9 energetick\u00e9 vozidl\u00e1 a priemyseln\u00e9 stroje, a v porovnan\u00ed s tranzistormi IGBT pon\u00fakaj\u00fa lep\u0161\u00ed v\u00fdkon z h\u013eadiska v\u00fdkonu, rozptylu tepla a teplotn\u00e9ho rozsahu. Okrem toho ich spo\u013eahlivos\u0165 prevy\u0161uje aj spo\u013eahlivos\u0165 tranzistorov IGBT.<\/p>\n
Ke\u010f sa na hradlo aplikuje kladn\u00e9 nap\u00e4tie na povrch krem\u00edka typu p, diery s\u00fa pri\u0165ahovan\u00e9 jeho elektrick\u00fdm po\u013eom a zanech\u00e1vaj\u00fa za sebou pr\u00e1zdnu oblas\u0165 naz\u00fdvan\u00fa deple\u010dn\u00e1 z\u00f3na.<\/p>\n
Karbid krem\u00edka MOSFET sa vyzna\u010duj\u00fa vysok\u00fdm menovit\u00fdm nap\u00e4t\u00edm a v\u010faka svojim energeticky \u00fasporn\u00fdm vlastnostiam a efekt\u00edvnym schopnostiam odv\u00e1dza\u0165 teplo dosahuj\u00fa v\u00fdnimo\u010dn\u00e9 v\u00fdsledky v r\u00f4znych elektronick\u00fdch obvodoch.<\/p>\n
Vyzna\u010duj\u00fa sa ni\u017e\u0161\u00edm odporom zapnutia a pracuj\u00fa pri vy\u0161\u0161\u00edch frekvenci\u00e1ch ako tradi\u010dn\u00e9 v\u00fdkonov\u00e9 zariadenia na b\u00e1ze krem\u00edka, ktor\u00e9 s\u00fa \u010dasto \u00fazkym hrdlom modern\u00fdch syst\u00e9mov, \u010do prin\u00e1\u0161a v\u00fdznamn\u00e9 v\u00fdhody z h\u013eadiska men\u0161ej ve\u013ekosti komponentov a \u00fa\u010dinnosti syst\u00e9mu.<\/p>\n
Nap\u00e1jacie zariadenia SiC sa m\u00f4\u017eu pochv\u00e1li\u0165 lep\u0161\u00edmi elektrick\u00fdmi parametrami v porovnan\u00ed s krem\u00edkov\u00fdmi zariadeniami vr\u00e1tane ni\u017e\u0161ej hodnoty RDSon a prev\u00e1dzkovej teploty, v\u010faka \u010domu s\u00fa vhodn\u00e9 pre n\u00e1ro\u010dn\u00e9 aplik\u00e1cie, ako s\u00fa trak\u010dn\u00e9 meni\u010de, zv\u00e1racie stroje, syst\u00e9my obnovite\u013en\u00fdch zdrojov energie a nab\u00edjacie stanice, d\u00e1tov\u00e9 centr\u00e1 IT, ako aj robustn\u00e9 prostredia, napr\u00edklad zv\u00e1racie kab\u00edny. V\u010faka ich vynikaj\u00facej spo\u013eahlivosti a \u017eivotnosti s\u00fa medzi in\u017einiermi mimoriadne ob\u013e\u00faben\u00e9 - u\u017e len tento faktor je d\u00f4vodom ich rast\u00facej popularity medzi in\u017einiermi.<\/p>\n
MOSFETy z karbidu krem\u00edka umo\u017e\u0148uj\u00fa v\u00fdkonov\u00fdm zariadeniam efekt\u00edvne spracov\u00e1va\u0165 vysok\u00e9 pr\u00fady, \u010do je ve\u013emi d\u00f4le\u017eit\u00e9, preto\u017ee to umo\u017e\u0148uje vy\u0161\u0161ie sp\u00ednacie frekvencie, ktor\u00e9 zni\u017euj\u00fa po\u017eiadavky na induk\u010dn\u00e9 a kapacitn\u00e9 komponenty pri n\u00e1vrhu v\u00fdkonov\u00fdch obvodov.<\/p>\n
SiC MOSFETy funguj\u00fa tak, \u017ee medzi ich zdrojov\u00fdmi a odtokov\u00fdmi svorkami te\u010die pr\u00fad, ktor\u00fd sa aktivuje priveden\u00edm kladn\u00e9ho nap\u00e4tia na ich br\u00e1ny; t\u00fdm sa vytvor\u00ed elektrick\u00e9 pole, ktor\u00e9 pri\u0165ahuje elektr\u00f3ny z hornej p-oblasti do vodiv\u00e9ho kan\u00e1la, \u010d\u00edm sa uvedie do zapnut\u00e9ho stavu. Naopak, prilo\u017een\u00edm nulov\u00e9ho alebo z\u00e1porn\u00e9ho nap\u00e4tia sa tento \u00fa\u010dinok obr\u00e1ti, \u010d\u00edm sa zastav\u00ed tok pr\u00fadu a zariadenie sa vr\u00e1ti do vypnut\u00e9ho stavu.<\/p>\n
Ke\u010f\u017ee SiC MOSFETy s\u00fa unipol\u00e1rne zariadenia (pr\u00fad te\u010die len elektr\u00f3nmi cez polovodi\u010dov\u00e9 oblasti typu n), mo\u017eno ich zap\u00edna\u0165 pri relat\u00edvne n\u00edzkych nap\u00e4tiach dren\u00e1\u017e - zdroj s ve\u013emi mal\u00fdm odporom v zapnutom stave, \u010do vedie k r\u00fdchlej\u0161\u00edm \u010dasom sp\u00ednania.<\/p>\n
Mosfety z karbidu krem\u00edka s\u00fa ur\u010den\u00e9 na pou\u017eitie v n\u00e1ro\u010dn\u00fdch podmienkach a s\u00fa vynikaj\u00facim doplnkom trak\u010dn\u00fdch meni\u010dov, motorov\u00fdch pohonov, sol\u00e1rnych a z\u00e1lo\u017en\u00fdch nap\u00e1jac\u00edch syst\u00e9mov. Ich vy\u0161\u0161ia \u00fa\u010dinnos\u0165 v porovnan\u00ed s krem\u00edkov\u00fdmi zariadeniami umo\u017e\u0148uje vytv\u00e1ra\u0165 men\u0161ie syst\u00e9my v r\u00e1mci men\u0161\u00edch rozmerov a z\u00e1rove\u0148 pon\u00faka v\u00e4\u010d\u0161\u00ed v\u00fdkon ako samotn\u00e9 v\u00fdkonnej\u0161ie krem\u00edkov\u00e9 zariadenia.<\/p>\n
SiC MOSFETy m\u00f4\u017eu dosahova\u0165 ove\u013ea vy\u0161\u0161ie blokovacie nap\u00e4tia ako IGBT (a\u017e 1200 V), av\u0161ak ich sign\u00e1l odtoku k zdroju (VDS) sa mus\u00ed na vysok\u00fdch stran\u00e1ch sp\u00edna\u010dov starostlivo riadi\u0165, aby sa zabr\u00e1nilo prep\u00e4tiu, ktor\u00e9 by mohlo vies\u0165 k v\u00fdrazn\u00e9mu Joulovmu ohrevu a po\u0161kodeniu ich zariadenia. Preto s\u00fa na spr\u00e1vne riadenie potrebn\u00e9 presn\u00e9 overovacie merania pomocou osciloskopu s presn\u00fdmi sondami a m\u0155tvymi \u010dasmi.<\/p>\n
Spolo\u010dnos\u0165 Tektronix poskytuje cel\u00fd rad n\u00e1strojov na overovanie v\u00fdkonnosti v\u00fdkonov\u00fdch polovodi\u010dov vr\u00e1tane MOSFET. Viac inform\u00e1ci\u00ed n\u00e1jdete v na\u0161ej novej aplika\u010dnej pozn\u00e1mke - Efekt\u00edvne meranie sign\u00e1lov MOSFET v SiC v\u00fdkonovej elektronike<\/p>\n
MOSFETy z karbidu krem\u00edka sa vyzna\u010duj\u00fa ni\u017e\u0161\u00edm zvodov\u00fdm pr\u00fadom ako ich krem\u00edkov\u00e9 n\u00e1protivky, \u010do umo\u017e\u0148uje vy\u0161\u0161iu r\u00fdchlos\u0165 sp\u00ednania a minimalizuje celkov\u00e9 energetick\u00e9 straty v nap\u00e1jac\u00edch syst\u00e9moch.<\/p>\n
SiC MOSFETy s\u00fa odolnej\u0161ie vo\u010di tepeln\u00e9mu \u00faniku ako \u0161tandardn\u00e9 krem\u00edkov\u00e9 v\u00fdkonov\u00e9 MOSFETy a IGBT, \u010do im umo\u017e\u0148uje efekt\u00edvne fungova\u0165 aj pri vy\u0161\u0161\u00edch teplot\u00e1ch okolia bez dodato\u010dn\u00fdch chladiacich komponentov. V\u010faka tomu s\u00fa SiC MOSFETy obzvl\u00e1\u0161\u0165 vhodn\u00e9 pre priemyseln\u00e9 a automobilov\u00e9 aplik\u00e1cie, kde si presn\u00e9 polohovanie objektov alebo pohyb ramien n\u00e1strojov vy\u017eaduje vysok\u00e9 riadenie servomotorov na presn\u00e9 polohovanie alebo pohyb.<\/p>\n
Tretia gener\u00e1cia MOSFETov z karbidu krem\u00edka (SiC) spolo\u010dnosti GeneSiC sa m\u00f4\u017ee pochv\u00e1li\u0165 najmodernej\u0161\u00edmi obalmi a hol\u00fdmi dierami, ktor\u00e9 pon\u00fakaj\u00fa menovit\u00e9 nap\u00e4tie od 650 V do 6,5 kV, v\u010faka \u010domu s\u00fa vhodn\u00e9 pre tvrd\u00e9 a rezonan\u010dn\u00e9 sp\u00ednacie topol\u00f3gie, efekt\u00edvne riadia IGBT a ved\u00fa k v\u00fdrazn\u00e9mu zn\u00ed\u017eeniu hmotnosti a ve\u013ekosti.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon Carbide MOSFETs outperform Si IGBT transistors when it comes to high voltage applications like smart energy vehicles and industrial […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[3],"tags":[],"class_list":["post-58","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/posts\/58","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/comments?post=58"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/posts\/58\/revisions"}],"predecessor-version":[{"id":59,"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/posts\/58\/revisions\/59"}],"wp:attachment":[{"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/media?parent=58"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/categories?post=58"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/sk\/wp-json\/wp\/v2\/tags?post=58"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}