Sil\u012bcija karb\u012bds, bie\u017e\u0101k saukts par karborundu vai SiC, ir ciets keramikas materi\u0101ls ar daudz\u0101m pielieto\u0161anas iesp\u0113j\u0101m. \u0160o daudzpus\u012bgo vielu izmanto k\u0101 abraz\u012bvu, tai piem\u012bt pla\u0161as joslas starp\u012bbas pusvad\u012bt\u0101ju \u012bpa\u0161\u012bbas, un to var pat izgatavot struktur\u0101l\u0101s keramikas komponentos.<\/p>\n
Ra\u017eo\u0161ana ietver polisiloks\u0101nu reakciju un pirol\u012bzi zem spiediena, to mal\u0161anu pulvera veid\u0101, sa\u0137epin\u0101\u0161anu, lai veidotu cietas formas, un p\u0113c tam sl\u012bp\u0113\u0161anu, lai ieg\u016btu gal\u012bgo mikrostrukt\u016bras formu. Katram no \u0161iem posmiem ir b\u016btiska noz\u012bme \u0161\u012b gal\u012bg\u0101 materi\u0101la ra\u017eo\u0161an\u0101, un rezult\u0101ti at\u0161\u0137iras atkar\u012bb\u0101 no izmantotaj\u0101m form\u0113\u0161anas metod\u0113m, kas b\u016btiski ietekm\u0113 mikrostrukt\u016bru.<\/p>\n
Sil\u012bcija karb\u012bda bl\u012bvajam sast\u0101vam ir b\u016btiska noz\u012bme t\u0101 sp\u0113j\u0101 iztur\u0113t \u0137\u012bmisko, termisko un meh\u0101nisko slodzi. Silicija karb\u012bdam piem\u012bt izcilas ciet\u012bbas un siltumvad\u012btsp\u0113jas \u012bpa\u0161\u012bbas, t\u0101p\u0113c tas ir lielisks materi\u0101ls augstas veiktsp\u0113jas un augstas spriedzes lietojumiem.<\/p>\n
Bl\u012bv\u0101ki materi\u0101li parasti ir iztur\u012bg\u0101ki pret koroziju un nodilumu. Turkl\u0101t to zemais izple\u0161an\u0101s\/samazin\u0101\u0161an\u0101s \u0101trums \u013cauj tiem lab\u0101k iztur\u0113t ekstrem\u0101las temperat\u016bras, padarot tos ide\u0101li piem\u0113rotus elektr\u012bbas un g\u0101zes sist\u0113m\u0101m.<\/p>\n
SiC ir ar\u012b \u013coti iztur\u012bgs pret starojumu, un sal\u012bdzin\u0101jum\u0101 ar citiem pusvad\u012bt\u0101jiem tam ir neparasti liela joslas sprauga, kas \u013cauj tam darboties daudz augst\u0101k\u0101s temperat\u016br\u0101s, spriegumos un frekvenc\u0113s, sal\u012bdzinot ar citiem pusvad\u012bt\u0101jiem. T\u0101p\u0113c SiC var izmantot da\u017e\u0101d\u0101s elektronikas un r\u016bpniec\u012bbas nozar\u0113s, tostarp elektroener\u0123ijas ra\u017eo\u0161an\u0101, avi\u0101cij\u0101, kosmos\u0101 un automobi\u013cu r\u016bpniec\u012bb\u0101.<\/p>\n
Lieliem komponentiem var b\u016bt gr\u016bti sasniegt augstu SiC bl\u012bvumu. Ta\u010du ar rampas kompresijas tehnolo\u0123iju tagad ir iesp\u0113jams sasniegt vienm\u0113r\u012bgu bl\u012bvumu l\u012bdz pat 98% no teor\u0113tisk\u0101 bl\u012bvuma. Process ietver submikronu izm\u0113ra pulvera mais\u012bjuma, kas sast\u0101v galvenok\u0101rt no sil\u012bcija karb\u012bda ar boru saturo\u0161u piedevu, homog\u0113nas dispersijas rad\u012b\u0161anu; p\u0113c tam \u0161is pulvera mais\u012bjums tiek veidots za\u013c\u0101s form\u0101s un tad tiek sa\u0137epin\u0101ts 1900-2100 gr\u0101du temperat\u016br\u0101 kontrol\u0113tas atmosf\u0113ras apst\u0101k\u013cos.<\/p>\n
Boru saturo\u0161as piedevas j\u0101pievieno pulvera mais\u012b\u0161anas laik\u0101 t\u0101d\u0101 daudzum\u0101, kas atbilst vienai element\u0101r\u0101 bora masas da\u013cai uz 100 da\u013c\u0101m sil\u012bcija karb\u012bda, lai nodro\u0161in\u0101tu dro\u0161u bl\u012bv\u0113\u0161anu bez segreg\u0101cijas uz graudu robe\u017e\u0101m.<\/p>\n
Sil\u012bcija karb\u012bds (C-Si) ir m\u0101ksl\u012bgs materi\u0101ls, kas sast\u0101v no oglek\u013ca (C) un sil\u012bcija (Si). Tam ir otrs ciet\u0101kais p\u0113c Mohsas ciet\u012bbas r\u0101d\u012bt\u0101js aiz bora karb\u012bda - 9, un tas nodro\u0161ina izcilu iztur\u012bbu, nodilumiztur\u012bbu un iztur\u012bbu pret koroziju; faktiski tas var iztur\u0113t pat fluor\u016bde\u0146ra\u017esk\u0101bes un s\u0113rsk\u0101bes iedarb\u012bbu, nesadaloties - turkl\u0101t to nevar iz\u0161\u0137\u012bdin\u0101t \u016bdens, vairums \u0137\u012bmisko vielu, tostarp s\u0101rmi! Silicija karb\u012bda k\u0101 in\u017eenierijas materi\u0101la daudzpus\u012bba padara to popul\u0101ru ar\u012b zin\u0101tnieku vid\u016b.<\/p>\n
T\u0101 k\u0101 smir\u0123elis iztur \u0101trdarb\u012bgu grie\u0161anu un sl\u012bp\u0113\u0161anu, k\u0101 ar\u012b to var izmantot abraz\u012bvai str\u016bklas apstr\u0101dei un apstr\u0101dei, t\u0101 iztur\u012bbas un rentabilit\u0101tes d\u0113\u013c to pla\u0161i izmanto m\u016bsdienu lapid\u0101rajos darbos. Turkl\u0101t tas ir svar\u012bga izejviela sl\u012bp\u0113\u0161anas un pul\u0113\u0161anas savienojumu ra\u017eo\u0161an\u0101.<\/p>\n
Sil\u012bcija karb\u012bds ir k\u013cuvis par galveno kosmosa tehnolo\u0123iju materi\u0101lu, pateicoties t\u0101 izcilajai iztur\u012bbai un radi\u0101cijas l\u012bme\u0146a iztur\u012bbai. T\u0101p\u0113c no sil\u012bcija karb\u012bda izgatavoti spogu\u013ci ir k\u013cuvu\u0161i par vair\u0101ku liel\u0101ko teleskopu, piem\u0113ram, Herschel un BepiColombo misiju, izv\u0113li, un tos pat var veidot stingros r\u0101mjos, lai tie iztur\u0113tu Veneras temperat\u016bru un radi\u0101cijas l\u012bmeni, kas p\u0101rsniedz gaid\u012bto.<\/p>\n
Jaun\u0101kie eksperiment\u0101lie pier\u0101d\u012bjumi liecina, ka a-SiC ir stabils B1 f\u0101z\u0113 pla\u0161\u0101 apst\u0101k\u013cu diapazon\u0101, kas atbilst paredzamajiem ar oglekli bag\u0101tu eksoplan\u0113tu mantijas apst\u0101k\u013ciem, pret\u0113ji t\u0101 uzved\u012bbai uz Zemes, kur tas strauji sadal\u0101s sil\u012bcija dioks\u012bd\u0101 un sk\u0101bekl\u012b.<\/p>\n
Sil\u012bcija karb\u012bds, bie\u017e\u0101k saukts par SiC, ir \u0137\u012bmisks savienojums, kas sast\u0101v no sil\u012bcija (atomu skaits 14) un oglek\u013ca (atomu skaits 6). Tam ir no za\u013ca l\u012bdz zilgan\u012bgi melna izskats ar nedego\u0161\u0101m \u012bpa\u0161\u012bb\u0101m; t\u0101 bl\u012bvums ir 3,21 g uz kubikc cm3.<\/p>\n
Sil\u012bcija karb\u012bds ierobe\u017eot\u0101 daudzum\u0101 dab\u0101 sastopams meteor\u012btos, korunda un kimberl\u012bta atradn\u0113s, tom\u0113r liel\u0101k\u0101 da\u013ca elektroniskaj\u0101s ier\u012bc\u0113s izmantot\u0101 sil\u012bcija karb\u012bda tiek ra\u017eota sint\u0113tiski. Edvards A\u010dons pirmo reizi sintez\u0113ja sil\u012bcija karb\u012bdu 1891. gad\u0101, kad vi\u0146\u0161 m\u0113\u0123in\u0101ja rad\u012bt m\u0101ksl\u012bgos dimantus, kars\u0113jot m\u0101lu un pulverveida koksu elektrisk\u0101 loka kr\u0101sn\u012b; to darot, vi\u0146\u0161 paman\u012bja uz oglek\u013ca elektrodiem piestiprin\u0101tus spilgti za\u013cus krist\u0101lus, kas izskat\u012bj\u0101s l\u012bdz\u012bgi dimantam, un nosauca \u0161os krist\u0101lus par \u201cmoisan\u012btu\u201d p\u0113c akmens veida, kam tie l\u012bdzin\u0101j\u0101s.<\/p>\n
SiC ir pusvad\u012bt\u0101ju materi\u0101ls ar \u013coti platu joslas spraugu, kas \u013cauj tam darboties augst\u0101k\u0101s temperat\u016br\u0101s un pie augst\u0101kiem spriegumiem nek\u0101 citiem pusvad\u012bt\u0101ju materi\u0101liem. Pateicoties izcilajai siltumvad\u012btsp\u0113jai, karstums tiek izvad\u012bts \u0101tri, savuk\u0101rt t\u0101 bl\u012bv\u0101 krist\u0101lisk\u0101 strukt\u016bra nodro\u0161ina izcilu nodilumiztur\u012bbu - ide\u0101li piem\u0113rots t\u0101diem lietojumiem k\u0101 griez\u0113jinstrumenti.<\/p>\n
EAG Laboratories ir pla\u0161a pieredze SiC anal\u012bz\u0113, izmantojot gan masveida, gan telpiski iz\u0161\u0137irtas anal\u012btisk\u0101s metodes. SiC ir \u0101rk\u0101rt\u012bgi noder\u012bgs materi\u0101ls pusvad\u012bt\u0101ju ra\u017eo\u0161anai, jo to var le\u0123\u0113t ar da\u017e\u0101diem elementiem, lai main\u012btu t\u0101 elektrotermisk\u0101s \u012bpa\u0161\u012bbas. Lai rad\u012btu augstas kvalit\u0101tes pusvad\u012bt\u0101ju izstr\u0101d\u0101jumus, \u013coti svar\u012bgi ir nodro\u0161in\u0101t piedevu koncentr\u0101ciju un telpisko sadal\u012bjumu, vienlaikus nov\u0113r\u0161ot nev\u0113lamus pies\u0101r\u0146ot\u0101jus.<\/p>\n
Sil\u012bcija karb\u012bds ir \u0101rk\u0101rt\u012bgi bl\u012bvs materi\u0101ls un viena no ciet\u0101kaj\u0101m pieejamaj\u0101m viel\u0101m, kas nodro\u0161ina izcilu iztur\u012bbu pret koroziju k\u0101 keramikas materi\u0101ls, kas, iesp\u0113jams, var\u0113tu samazin\u0101t akt\u012bv\u0101s dzes\u0113\u0161anas sist\u0113mas elektriskajos transportl\u012bdzek\u013cos.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) ir kovalenti saist\u012bta gai\u0161i pel\u0113ka cieta viela, kuras relat\u012bv\u0101 ciet\u012bba p\u0113c Mosa skalas l\u012bdzin\u0101s dimanta ciet\u012bbai. Ugunsiztur\u012bgie materi\u0101li ar \u0161\u0101d\u0101m \u012bpa\u0161\u012bb\u0101m ir ide\u0101li piem\u0113roti izmanto\u0161anai, jo SiC ir augsta ku\u0161anas temperat\u016bra, siltumvad\u012btsp\u0113ja un zems termisk\u0101s izple\u0161an\u0101s koeficients.<\/p>\n
Sil\u012bcija karb\u012bdu var le\u0123\u0113t ar sl\u0101pekli vai fosforu, veidojot n tipa pusvad\u012bt\u0101ju, vai le\u0123\u0113t ar beriliju, boru, alum\u012bniju un galliju, veidojot p tipa pusvad\u012bt\u0101ju. T\u0101 plat\u0101 joslas sprauga \u013cauj tam iztur\u0113t tr\u012bs reizes liel\u0101ku spriegumu nek\u0101 standarta sil\u012bcija pusvad\u012bt\u0101jiem. Sil\u012bcija karb\u012bds ir k\u013cuvis par galveno materi\u0101lu elektronisko ier\u012b\u010du ra\u017eo\u0161an\u0101, jo to pla\u0161i izmanto k\u0101 elektronisko komponentu materi\u0101lu.<\/p>\n
Dabiskas SiC atradnes ir da\u017eos meteor\u012btu paraugos, korunda atradn\u0113s un kimberl\u012bt\u0101, bet liel\u0101k\u0101 da\u013ca r\u016bpniecisk\u0101 SiC tiek ra\u017eota sint\u0113tiski. SSiC un SiSiC varianti ir vieni no visbie\u017e\u0101k izmantotajiem materi\u0101liem t\u0101dos sare\u017e\u0123\u012btos apst\u0101k\u013cos k\u0101 3D druk\u0101\u0161ana, balistikas ra\u017eo\u0161ana, \u0137\u012bmisk\u0101 ra\u017eo\u0161ana un energotehnolo\u0123iju lietojumi, k\u0101 ar\u012b cauru\u013cvadu sist\u0113mu komponenti, pateicoties to termiskaj\u0101m \u012bpa\u0161\u012bb\u0101m; to augst\u0101ks bl\u012bvums nek\u0101 t\u012bram kvarcam padara \u0161os savienojumus par pievilc\u012bgu met\u0101la aizst\u0101j\u0113ju, un tie pied\u0101v\u0101 labas stingr\u012bbas, ciet\u012bbas un augstas temperat\u016bras iztur\u012bbas \u012bpa\u0161\u012bbas, kas konkur\u0113 ar t\u012bra kvarca termiskaj\u0101m \u012bpa\u0161\u012bb\u0101m, sal\u012bdzinot ar t\u012bra kvarca un augstas temperat\u016bras iztur\u012bbu, padarot \u0161os savienojumus par pievilc\u012bgu met\u0101la aizst\u0101j\u0113ju alternat\u012bvu.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide, more commonly referred to as Carborundum or SiC, is a hard ceramic material with numerous applications. This versatile […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[3],"tags":[],"class_list":["post-90","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/90","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/comments?post=90"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/90\/revisions"}],"predecessor-version":[{"id":91,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/90\/revisions\/91"}],"wp:attachment":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/media?parent=90"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/categories?post=90"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/tags?post=90"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}