Sil\u012bcija karb\u012bda pl\u0101ksn\u012bte ir m\u0101ksl\u012bgs sil\u012bcija un oglek\u013ca savienojums, kam piem\u012bt izcilas elektrisk\u0101s un siltuma iztur\u012bbas \u012bpa\u0161\u012bbas.<\/p>\n
Pateicoties iztur\u012bbai pret termisko \u0161oku, \u0161is materi\u0101ls ir ide\u0101li piem\u0113rots izmanto\u0161anai jaudas pusvad\u012bt\u0101jos un elektromobi\u013cu uzl\u0101des infrastrukt\u016br\u0101, kur rodas \u012bslaic\u012bgas meh\u0101niskas slodzes, ko izraisa p\u0113k\u0161\u0146as temperat\u016bras izmai\u0146as. \u0160\u012b \u012bpa\u0161\u012bba padara to par ide\u0101lu materi\u0101la izv\u0113li gad\u012bjumos, kad izmanto\u0161anas pras\u012bb\u0101 ir iek\u013cauta iztur\u012bba pret termisko \u0161oku.<\/p>\n
Sil\u012bcija karb\u012bda (SiC) pl\u0101t\u0146u augst\u0101 siltumvad\u012btsp\u0113ja padara t\u0101s par ide\u0101lu risin\u0101jumu elektroniskaj\u0101m ier\u012bc\u0113m, kas darbojas gan augst\u0101 temperat\u016br\u0101, gan zem augsta sprieguma, piem\u0113ram, jaudas pusvad\u012bt\u0101jiem, kurus izmanto elektromobi\u013cos vai 5G tehnolo\u0123ij\u0101, vai ar\u012b \u0101trdarb\u012bgiem sensoriem. Sp\u0113ja iztur\u0113t ekstrem\u0101lus apst\u0101k\u013cus, k\u0101di rakstur\u012bgi, piem\u0113ram, kosmosa un avi\u0101cijas nozar\u0113, at\u0161\u0137ir SiC no citiem pl\u0101ksn\u012b\u0161u materi\u0101liem.<\/p>\n
SiC pl\u0101tn\u012b\u0161u ra\u017eo\u0161an\u0101 ir vair\u0101ki b\u016btiski posmi. Pirmk\u0101rt, vienkrist\u0101la stie\u0146us ar prec\u012bzijas z\u0101\u0123i sagrie\u017e pl\u0101n\u0101s pl\u0101tn\u012bt\u0113s. P\u0113c tam \u0161\u012bs pl\u0101tn\u012btes tiek pak\u013cautas \u0137\u012bmiskai un meh\u0101niskai apstr\u0101dei, lai pan\u0101ktu vienm\u0113r\u012bgu virsmu un biezumu, pirms t\u0101s tiek izmantotas k\u0101 pamats fotolitogr\u0101fijas, \u0113\u0161anas un nogulsn\u0113\u0161anas procesiem, kuru rezult\u0101t\u0101 tiek izgatavotas pusvad\u012bt\u0101ju ier\u012bces.<\/p>\n
\u0160aj\u0101 proces\u0101 b\u016btiska noz\u012bme ir in\u017eenierzin\u0101tn\u0113m un p\u0113tniec\u012bbai, jo \u012bpa\u0161i t\u0101d\u0113\u013c, ka sil\u012bcija karb\u012bds ir daudz ciet\u0101ks nek\u0101 t\u0101 sil\u012bcija ekvivalents, un t\u0101d\u0113\u013c t\u0101 sagrie\u0161anai nepiecie\u0161ams iev\u0113rojami ilg\u0101ks laiks nek\u0101 sil\u012bcija monokrist\u0101la sagrie\u0161anai. T\u0101d\u0113\u013c grie\u0161anas metodes ir r\u016bp\u012bgi j\u0101kalibr\u0113.<\/p>\n
Pa\u0161reiz ir pieejamas vair\u0101kas metodes augstas kvalit\u0101tes SiC pl\u0101t\u0146u ra\u017eo\u0161anai. Viena no \u0161\u0101d\u0101m metod\u0113m ir grie\u0161ana ar l\u0101zeru; \u0161\u012b pieeja ir izr\u0101d\u012bjusies \u012bpa\u0161i veiksm\u012bga lielu, cietu materi\u0101lu, piem\u0113ram, SiC, gad\u012bjum\u0101; tom\u0113r \u0161is process var b\u016bt d\u0101rgs un t\u0101 veiksm\u012bgai \u012bsteno\u0161anai nepiecie\u0161ami iev\u0113rojami in\u017eeniertehniskie p\u016bli\u0146i.<\/p>\n
Sil\u012bcija karb\u012bda pl\u0101ksnes rada revol\u016bciju jaudas elektronikas jom\u0101. Pateicoties to sp\u0113jai iztur\u0113t augstas temperat\u016bras un spriegumus, \u0161\u012bs pl\u0101ksnes ir k\u013cuvu\u0161as par b\u016btiskiem elektromobi\u013cu un atjaunojamo energoresursu sist\u0113mu komponentiem. To pla\u0161\u0101 ener\u0123ijas sprauga \u013cauj t\u0101m darboties augst\u0101k\u0101s frekvenc\u0113s nek\u0101 tradicion\u0101lie pusvad\u012bt\u0101ju materi\u0101li.<\/p>\n
SiC ir \u0101rk\u0101rt\u012bgi cietais keramikas materi\u0101ls, kas izstr\u0101d\u0101ts, lai iztur\u0113tu ekstrem\u0101las temperat\u016bras un b\u016btu iztur\u012bgs pret \u0137\u012bmisko iedarb\u012bbu, t\u0101d\u0113j\u0101di padarot to par ide\u0101lu materi\u0101lu izmanto\u0161anai sildier\u012b\u010du perif\u0113rijas iek\u0101rt\u0101s un pusvad\u012bt\u0101ju kr\u0101sn\u012bs. Turkl\u0101t t\u0101 iztur\u012bba pret termisko \u0161oku pal\u012bdz ierobe\u017eot boj\u0101jumus, ko rada p\u0113k\u0161\u0146as temperat\u016bras sv\u0101rst\u012bbas.<\/p>\n
Sil\u012bcija karb\u012bda pl\u0101ksnes pied\u0101v\u0101 ne tikai iztur\u012bbu pret termisko \u0161oku; t\u0101m piem\u012bt ar\u012b zems siltuma izple\u0161an\u0101s koeficients, kas noz\u012bm\u0113, ka to izple\u0161an\u0101s un sarau\u0161an\u0101s notiek aptuveni vien\u0101d\u0101 \u0101trum\u0101, t\u0101d\u0113j\u0101di saglab\u0101jot nemain\u012bgus izm\u0113rus ekstrem\u0101los apst\u0101k\u013cos. \u0160\u012b \u012bpa\u0161\u012bba padara sil\u012bcija karb\u012bdu ide\u0101lu materi\u0101lu mazu ier\u012b\u010du ra\u017eo\u0161anai, kur\u0101s vien\u0101 mikrosh\u0113m\u0101 ir ietverts liel\u0101ks tranzistoru skaits.<\/p>\n
Sil\u012bcija karb\u012bda materi\u0101lu var ra\u017eot, izmantojot vai nu elektrisk\u0101s loka sa\u0137epin\u0101\u0161anu augst\u0101 temperat\u016br\u0101 vakuuma kr\u0101sn\u012b, vai ar\u012b \u0137\u012bmisko tvaika nogulsn\u0113\u0161anu (CVD), kuras laik\u0101 specializ\u0113tas g\u0101zes tiek ievad\u012btas vakuuma vid\u0113 un savienojas, veidojot kubveida sil\u012bcija karb\u012bda krist\u0101lus, kas p\u0113c tam tiek nogulsn\u0113ti uz substr\u0101tiem, izmantojot vai nu \u0161\u0137idruma nogulsn\u0113\u0161anu, vai dimanta instrumentus.<\/p>\n
Sil\u012bcija karb\u012bda pl\u0101ksn\u0113m piem\u012bt izcilas elektrisk\u0101s un termisk\u0101s \u012bpa\u0161\u012bbas, kas padara t\u0101s par ide\u0101lu materi\u0101lu jaudas elektronikas lietojumiem. To pla\u0161\u0101 ener\u0123ijas sprauga \u013cauj t\u0101m iztur\u0113t augst\u0101kas temperat\u016bras un spriegumus nek\u0101 citiem pusvad\u012bt\u0101ju materi\u0101liem; turkl\u0101t to augst\u0101 elektronu mobilit\u0101te \u013cauj t\u0101m efekt\u012bv\u0101k vad\u012bt liel\u0101kas str\u0101vas, nodro\u0161inot \u0101tr\u0101ku reakcijas laiku un palielin\u0101tu ener\u0123ijas bl\u012bvumu.<\/p>\n
SiC pl\u0101t\u0146u ra\u017eo\u0161ana s\u0101kas ar augstas t\u012br\u012bbas pak\u0101pes saf\u012bra, germ\u0101nija vai sil\u012bcija monokrist\u0101la liet\u0146iem. P\u0113c tam, kad \u0161ie stie\u0146i ar prec\u012bzijas z\u0101\u0123i tiek sagriezti pl\u0101n\u0101s pl\u0101ksn\u012bt\u0113s, t\u0101s tiek pak\u013cautas vair\u0101kiem \u0137\u012bmiskajiem un meh\u0101niskajiem procesiem, lai ieg\u016btu l\u012bdzenu, gludu virsmu, kas kalpo k\u0101 \u201eaudekls\u201d, uz kura veidojas t\u0101das tehnolo\u0123ijas k\u0101 fotolitogr\u0101fija, \u0113\u0161ana un uzkl\u0101\u0161ana.<\/p>\n
Sil\u012bcija karb\u012bds ir \u0137\u012bmiskais savienojums, kas sast\u0101v no t\u012bra sil\u012bcija un oglek\u013ca un ko var le\u0123\u0113t ar sl\u0101pekli vai fosforu, lai ieg\u016btu n-tipa pusvad\u012bt\u0101jus, vai ar\u012b ar galliju, alum\u012bniju vai boru, lai izveidotu p-tipa pusvad\u012bt\u0101jus. Pateicoties iztur\u012bbai pret koroziju, zemai ku\u0161anas temperat\u016brai un termiskajai stabilit\u0101tei, PEEK var izmantot daudzos r\u016bpnieciskos pielietojumos \u2014 s\u0101kot no pusvad\u012bt\u0101ju kr\u0101sns pl\u0101ksn\u012b\u0161u palikt\u0146u balstiem un l\u0101psti\u0146\u0101m l\u012bdz pl\u0101ksn\u012b\u0161u palikt\u0146u balstiem un l\u0101psti\u0146\u0101m, ko izmanto k\u0101 pl\u0101ksn\u012b\u0161u p\u0101rvieto\u0161anas meh\u0101nismus. Sil\u012bcija karb\u012bda izcilais iztur\u012bgums un ilgm\u016b\u017e\u012bba padara to par ide\u0101lu materi\u0101lu izmanto\u0161anai temperat\u016bras un sprieguma regul\u0113\u0161anas ier\u012bc\u0113s, piem\u0113ram, termistoriem un varistoriem. Turkl\u0101t \u0161is \u013coti iztur\u012bgais materi\u0101ls labi iztur gan starojuma iedarb\u012bbu, gan \u0137\u012bmisko iedarb\u012bbu \u2013 \u0161\u012bs \u012bpa\u0161\u012bbas ir veicin\u0101ju\u0161as t\u0101 pla\u0161u izmanto\u0161anu ener\u0123\u0113tikas jom\u0101, piem\u0113ram, elektriskajos automobi\u013cos un uzl\u0101des infrastrukt\u016br\u0101.<\/p>\n
Sil\u012bcija karb\u012bda pl\u0101ksnes sp\u0113j iztur\u0113t \u0101rk\u0101rt\u012bgi augstas temperat\u016bras un spriegumus, t\u0101d\u0113\u013c t\u0101s ir lieliska izv\u0113le elektroniskaj\u0101m ier\u012bc\u0113m, kur\u0101m nepiecie\u0161ama augsta veiktsp\u0113ja sare\u017e\u0123\u012btos apst\u0101k\u013cos, piem\u0113ram, elektriskajos transportl\u012bdzek\u013cos, saules ener\u0123ijas p\u0101rveido\u0161an\u0101, 5G bezvadu tehnolo\u0123ij\u0101s vai kosmosa elektronikas jom\u0101.<\/p>\n
Sil\u012bcija karb\u012bda (SiC) pl\u0101tnes tiek izgatavotas no saf\u012bra, germ\u0101nija vai sil\u012bcija monokrist\u0101la liet\u0146iem, kurus, izmantojot prec\u012bzijas z\u0101\u0123us, sagrie\u017e pl\u0101tn\u0113s. P\u0113c pul\u0113\u0161anas un apstr\u0101des, izmantojot \u0137\u012bmiskos un meh\u0101niskos procesus, lai pan\u0101ktu vienm\u0113r\u012bgu virsmu un biezuma vienveid\u012bbu, SiC pl\u0101ksnes k\u013c\u016bst par ide\u0101liem materi\u0101liem fotolitogr\u0101fijas apstr\u0101dei, \u0113vel\u0113\u0161anai vai nogul\u0161anas procesiem.<\/p>\n
SiC pl\u0101ksnes ra\u017eo\u0161anas proces\u0101 tiek pak\u013cautas liel\u0101m slodz\u0113m un triecieniem. \u0145emot v\u0113r\u0101 \u0161\u012b materi\u0101la trauslumu, t\u0101 apstr\u0101d\u0113 ir j\u0101iev\u0113ro dro\u0161\u012bbas pas\u0101kumi; piem\u0113ram, darbiniekiem j\u0101valk\u0101 aizsardz\u012bbas l\u012bdzek\u013ci, lai izvair\u012btos no putek\u013cu ieelpo\u0161anas un pies\u0101r\u0146ojuma.<\/p>\n
SiC ir pusvad\u012bt\u0101ju materi\u0101ls ar pla\u0161u ener\u0123ijas spraugu, kas nodro\u0161ina lab\u0101kus temperat\u016bras un frekvences r\u0101d\u012bt\u0101jus nek\u0101 tradicion\u0101l\u0101s sil\u012bcija b\u0101zes ier\u012bces. T\u0101d\u0113\u013c SiC ir pievilc\u012bga materi\u0101la izv\u0113le t\u0101diem uz\u0146\u0113mumiem k\u0101 ON Semiconductor (ON) un Wolfspeed (WOLF), kas ra\u017eo jaudas pusvad\u012bt\u0101jus uz sil\u012bcija karb\u012bda substr\u0101tiem.<\/p>\n
Kvalitat\u012bvas pl\u0101tnes sp\u0113l\u0113 b\u016btisku lomu to piem\u0113rot\u012bb\u0101 da\u017e\u0101diem pielietojumiem. Sil\u012bcija karb\u012bda pl\u0101t\u0146u klasifik\u0101cija \u2013 \u201ePrime\u201c un \u201eResearch\u201c \u2013 nosaka veiktsp\u0113jas sliek\u0161\u0146us, kurus t\u0101m j\u0101sasniedz, lai pal\u012bdz\u0113tu in\u017eenieriem sasniegt v\u0113lamos rezult\u0101tus. \u201ePrime\u201c klases pl\u0101ksn\u0113m ir rakstur\u012bga zema defektu un mikrocaurumu bl\u012bvums, kas garant\u0113 minim\u0101lu nepiln\u012bbu skaitu, kas, piem\u0113ram, var\u0113tu ietekm\u0113t ier\u012bces darb\u012bbu.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide wafer is an artificial compound of silicon and carbon that offers exceptional electrical and heat resistant properties. Thermal […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[3],"tags":[],"class_list":["post-88","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/88","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/comments?post=88"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/88\/revisions"}],"predecessor-version":[{"id":89,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/88\/revisions\/89"}],"wp:attachment":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/media?parent=88"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/categories?post=88"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/tags?post=88"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}