Sil\u012bcija karb\u012bda MOSFET p\u0101rsp\u0113j Si IGBT tranzistorus, kad runa ir par augstsprieguma lietojumiem, piem\u0113ram, viediem ener\u0123ijas transportl\u012bdzek\u013ciem un r\u016bpniecisk\u0101m iek\u0101rt\u0101m, pied\u0101v\u0101jot lab\u0101ku jaudu sal\u012bdzin\u0101jum\u0101 ar IGBT tranzistoriem jaudas veiktsp\u0113jas, siltuma izkliedes un temperat\u016bras diapazona zi\u0146\u0101. Turkl\u0101t to uzticam\u012bba ar\u012b p\u0101rsniedz IGBT tranzistoru uzticam\u012bbu.<\/p>\n
Kad pie v\u0101rtiem tiek pielikts pozit\u012bvs spriegums p tipa sil\u012bcija virsmai, t\u0101 elektriskais lauks piesaista caurumus un atst\u0101j aiz sevis tuk\u0161u apgabalu, ko sauc par noplicin\u0101\u0161anas zonu.<\/p>\n
Sil\u012bcija karb\u012bda MOSFET nodro\u0161ina augstu spriegumu un ir \u012bpa\u0161i piem\u0113roti da\u017e\u0101d\u0101s elektronisko sh\u0113mu konstrukcij\u0101s, pateicoties to ener\u0123ijas taup\u012b\u0161anas \u012bpa\u0161\u012bb\u0101m un efekt\u012bv\u0101m siltuma izklied\u0113\u0161anas sp\u0113j\u0101m.<\/p>\n
Tiem ir zem\u0101ka iesl\u0113g\u0161anas pretest\u012bba un tie darbojas augst\u0101k\u0101s frekvenc\u0113s nek\u0101 tradicion\u0101l\u0101s sil\u012bcija baro\u0161anas ier\u012bces, kas bie\u017ei vien ir m\u016bsdienu sist\u0113mu v\u0101jais punkts, un tas sniedz b\u016btiskas priek\u0161roc\u012bbas, samazinot komponentu izm\u0113ru un sist\u0113mas efektivit\u0101ti.<\/p>\n
SiC baro\u0161anas ier\u012bces var lepoties ar lab\u0101kiem elektriskajiem parametriem, sal\u012bdzinot ar sil\u012bcija ier\u012bc\u0113m, tostarp zem\u0101ku RDSon un darba temperat\u016bras r\u0101d\u012bt\u0101jiem, t\u0101p\u0113c t\u0101s ir piem\u0113rotas t\u0101diem sare\u017e\u0123\u012btiem lietojumiem k\u0101 vilces invertori, metin\u0101\u0161anas ma\u0161\u012bnas, atjaunojam\u0101s ener\u0123ijas sist\u0113mas un uzl\u0101des stacijas, IT datu centri, k\u0101 ar\u012b iztur\u012bg\u0101 vid\u0113, piem\u0113ram, metin\u0101\u0161anas kab\u012bn\u0113s. Pateicoties to izcilajai uzticam\u012bbai un kalpo\u0161anas ilgumam, t\u0101s ir \u013coti popul\u0101ras in\u017eenieru vid\u016b - \u0161is faktors vien nosaka to pieaugo\u0161o popularit\u0101ti in\u017eenieru vid\u016b.<\/p>\n
Sil\u012bcija karb\u012bda MOSFET \u013cauj baro\u0161anas ier\u012bc\u0113m efekt\u012bvi apstr\u0101d\u0101t lielus str\u0101vas stiprumus, kas ir \u013coti svar\u012bgi, jo tas \u013cauj sasniegt augst\u0101kas p\u0101rsl\u0113g\u0161an\u0101s frekvences, kas samazina indukt\u012bvo un kapacitat\u012bvo komponentu pras\u012bbas baro\u0161anas \u0137\u0113\u017eu projekt\u0113\u0161an\u0101.<\/p>\n
SiC MOSFET darbojas, izmantojot str\u0101vu starp avota un dren\u0101\u017eas spail\u0113m, kas tiek aktiviz\u0113ta, pievadot pozit\u012bvu spriegumu uz to aizvariem; tas rada elektrisko lauku, kas ievelk elektronus no aug\u0161\u0113j\u0101 p-re\u0123iona vado\u0161\u0101 kan\u0101l\u0101, p\u0101rvedot to \u201ciesl\u0113gt\u0101\u201d st\u0101vokl\u012b. Un otr\u0101di, pievadot nulles vai negat\u012bvu spriegumu, \u0161is efekts ir pret\u0113js, p\u0101rtraucot str\u0101vas pl\u016bsmu un atgrie\u017eot ier\u012bci izsl\u0113gt\u0101 st\u0101vokl\u012b.<\/p>\n
T\u0101 k\u0101 SiC MOSFET ir unipol\u0101ras ier\u012bces (str\u0101vas pl\u016bsma notiek tikai caur n tipa pusvad\u012bt\u0101ja apgabaliem), t\u0101s var iesl\u0113gt pie relat\u012bvi zema dren\u0101\u017eas un avota sprieguma ar \u013coti mazu iesl\u0113gt\u0101 st\u0101vok\u013ca pretest\u012bbu, kas nodro\u0161ina \u0101tr\u0101ku p\u0101rsl\u0113g\u0161an\u0101s laiku.<\/p>\n
Sil\u012bcija karb\u012bda mosfetes ir paredz\u0113tas lieto\u0161anai skarbos vides apst\u0101k\u013cos un ir lielisks papildin\u0101jums vilces invertoriem, motoru piedzi\u0146\u0101m, saules ener\u0123ijas un rezerves ener\u0123ijas sist\u0113m\u0101m. To augst\u0101ka efektivit\u0101te, sal\u012bdzinot ar sil\u012bcija ier\u012bc\u0113m, \u013cauj veidot maz\u0101kas sist\u0113mas ar maz\u0101ku laukumu, vienlaikus pied\u0101v\u0101jot liel\u0101ku jaudu nek\u0101 jaud\u012bg\u0101kas sil\u012bcija ier\u012bces.<\/p>\n
SiC MOSFET var sasniegt daudz liel\u0101kus blo\u0137\u0113\u0161anas spriegumus nek\u0101 IGBT (l\u012bdz 1200 V), tom\u0113r to dren\u0101\u017eas pret avotu (VDS) sign\u0101ls ir r\u016bp\u012bgi j\u0101p\u0101rvalda augst\u0101s puses sl\u0113d\u017eos, lai izvair\u012btos no p\u0101rsprieguma, kas var\u0113tu izrais\u012bt iev\u0113rojamu D\u017eoula sakar\u0161anu un ier\u012bces boj\u0101jumus. T\u0101p\u0113c pareizai vad\u012bbai ir nepiecie\u0161ami prec\u012bzi valid\u0101cijas m\u0113r\u012bjumi, izmantojot osciloskopu ar prec\u012bz\u0101m zond\u0113m un miru\u0161ajiem laikiem.<\/p>\n
Tektronix pied\u0101v\u0101 virkni r\u012bku jaudas pusvad\u012bt\u0101ju, tostarp MOSFET, veiktsp\u0113jas p\u0101rbaudei. Izp\u0113tiet vair\u0101k, izmantojot m\u016bsu jauno lietojumrakstu - Efekt\u012bva MOSFET sign\u0101lu m\u0113r\u012b\u0161ana SiC sp\u0113ka elektronik\u0101.<\/p>\n
Sil\u012bcija karb\u012bda MOSFET rakstur\u012bga maz\u0101ka nopl\u016bdes str\u0101va nek\u0101 to sil\u012bcija analogiem, kas nodro\u0161ina liel\u0101ku p\u0101rsl\u0113g\u0161an\u0101s \u0101trumu un samazina kop\u0113jos ener\u0123ijas zudumus energosist\u0113m\u0101s.<\/p>\n
SiC MOSFET ir iztur\u012bg\u0101ki pret termisko izs\u012bk\u0161anu nek\u0101 standarta sil\u012bcija jaudas MOSFET un IGBT, kas \u013cauj tiem efekt\u012bvi darboties pat augst\u0101k\u0101 apk\u0101rt\u0113j\u0101 temperat\u016br\u0101 bez papildu dzes\u0113\u0161anas komponentiem. T\u0101p\u0113c SiC MOSFET ir \u012bpa\u0161i piem\u0113roti r\u016bpnieciskiem un automobi\u013cu lietojumiem, kur prec\u012bzai objekta pozicion\u0113\u0161anai vai instrumentu rokas kust\u012bbai nepiecie\u0161ama augsta servomotora vad\u012bba, lai nodro\u0161in\u0101tu prec\u012bzu pozicion\u0113\u0161anu vai kust\u012bbu.<\/p>\n
GeneSiC tre\u0161\u0101s paaudzes sil\u012bcija karb\u012bda (SiC) MOSFET produktu kl\u0101sts pied\u0101v\u0101 modernas paketes un neatt\u012br\u012btus diegus, kas nodro\u0161ina nomin\u0101lo spriegumu no 650 V l\u012bdz 6,5 kV, padarot tos piem\u0113rotus stingr\u0101m un rezonanses komut\u0101cijas topolo\u0123ij\u0101m, efekt\u012bvi darbinot IGBT un \u013caujot iev\u0113rojami samazin\u0101t svaru un izm\u0113ru.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon Carbide MOSFETs outperform Si IGBT transistors when it comes to high voltage applications like smart energy vehicles and industrial […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[3],"tags":[],"class_list":["post-58","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/58","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/comments?post=58"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/58\/revisions"}],"predecessor-version":[{"id":59,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/58\/revisions\/59"}],"wp:attachment":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/media?parent=58"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/categories?post=58"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/tags?post=58"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}