Sil\u012bcija karb\u012bds jeb SiC ir \u0101rk\u0101rt\u012bgi iztur\u012bgs un iztur\u012bgs materi\u0101ls ar unik\u0101l\u0101m elektriskaj\u0101m \u012bpa\u0161\u012bb\u0101m.<\/p>\n
Krist\u0101liskais ogleklis var kristaliz\u0113ties bl\u012bvi sakopot\u0101s, kovalenti saist\u012bt\u0101s strukt\u016br\u0101s. T\u0101 atomi veido divus prim\u0101ros koordin\u0101cijas tetraedrus ar \u010detriem oglek\u013ca un \u010detriem sil\u012bcija atomiem katr\u0101 st\u016br\u012b, kas savienojas caur saviem st\u016briem, veidojot daudztipu strukt\u016bras, ko sauc par politipiem.<\/p>\n
Sil\u012bcija karb\u012bds ir \u0101rk\u0101rt\u012bgi ciets materi\u0101ls, kura ciet\u012bbas r\u0101d\u012bt\u0101js p\u0113c Mosa skalas ir no 9 l\u012bdz 10, kas ir kaut kur starp alum\u012bnija oks\u012bdu un dimantu. Sil\u012bcija karb\u012bdu pla\u0161i izmanto k\u0101 abraz\u012bvu materi\u0101lu m\u016bsdienu lapid\u0101rij\u0101, sl\u012bp\u0113\u0161anas un meh\u0101nisk\u0101s apstr\u0101des darbos, k\u0101 ugunsiztur\u012bgu r\u016bpniecisko kr\u0101\u0161\u0146u oder\u0113jumu, griez\u0113jinstrumentus, s\u016bk\u0146u un ra\u0137e\u0161u dzin\u0113ju nodilumiztur\u012bgas deta\u013cas, k\u0101 ar\u012b k\u0101 nodilumiztur\u012bgu sa\u0137eres lenti skeitborda d\u0113\u013ciem, k\u0101 ar\u012b karborunda iespiedgrafik\u0101 - karborunda smil\u0161u uzkl\u0101\u0161anas proces\u0101 uz alum\u012bnija pl\u0101ksnes un p\u0113c tam druk\u0101\u0161anas uz pap\u012bra, izmantojot rull\u012b\u0161u preses (Mountain).<\/p>\n
Sint\u0113tiskos polikarbon\u0101tus var ra\u017eot sint\u0113tiski, izmantojot vai nu reakciju savieno\u0161anas, vai sa\u0137epin\u0101\u0161anas procesus, p\u0113d\u0113jos no tiem uzlabojot, pievienojot 0,5% oglekli vai 0,5% boru k\u0101 sa\u0137epin\u0101\u0161anas pal\u012bgvielu, lai nov\u0113rstu virsmas dif\u016bziju un modific\u0113tu graudu robe\u017eu ener\u0123iju (Mountain).<\/p>\n
SiC ir iespaid\u012bga r\u016bpniecisk\u0101 keramika ar daudzveid\u012bg\u0101m meh\u0101nisk\u0101m \u012bpa\u0161\u012bb\u0101m, kas padara to nenov\u0113rt\u0113jamu da\u017e\u0101d\u0101s r\u016bpniec\u012bbas nozar\u0113s. Pateicoties augstajai siltumvad\u012btsp\u0113jai un zemajai termiskajai izple\u0161an\u0101s pak\u0101pei, t\u0101 izmanto\u0161ana elektronik\u0101 sauszemes elektrotransportl\u012bdzek\u013cu piedzi\u0146as sist\u0113m\u0101s ir k\u013cuvusi izplat\u012bt\u0101ka nek\u0101 jebkad agr\u0101k. Turkl\u0101t SiC elektrisk\u0101s \u012bpa\u0161\u012bbas var\u0113tu aizst\u0101t tradicion\u0101los sil\u012bcija pusvad\u012bt\u0101jus ar\u012b augst\u0101ka sprieguma lietojumos, piem\u0113ram, vilces p\u0101rveidot\u0101jos elektromobi\u013ciem un DC\/DC p\u0101rveidot\u0101jos uzl\u0101des stacij\u0101m.<\/p>\n
Sil\u012bcija karb\u012bdu var le\u0123\u0113t ar sl\u0101pekli un fosforu, lai veidotu n tipa pusvad\u012bt\u0101jus, savuk\u0101rt beriliju, boru, alum\u012bniju un galliju var le\u0123\u0113t, lai veidotu p tipa pusvad\u012bt\u0101jus. T\u0101 k\u0101 sil\u012bcija karb\u012bda strukt\u016bra ir bl\u012bvi sak\u0101rtota un simetriska, sil\u012bcija karb\u012bds ir ide\u0101la platforma dop\u0113\u0161anai.<\/p>\n
Ugunsiztur\u012bgais materi\u0101ls ir ciets, trausls un siltumvad\u012btsp\u0113j\u012bgs. Tas var iztur\u0113t augstas temperat\u016bras un spriegumu, bet t\u0101 zemais termisk\u0101s izple\u0161an\u0101s koeficients ir priek\u0161roc\u012bba, ja to izmanto lietojumos, kas pak\u013cauti temperat\u016bras sv\u0101rst\u012bb\u0101m.<\/p>\n
Lai gan dabiskais moisan\u012bts (Csi3SiO6) ir atrodams meteor\u012btos un kimberl\u012bt\u0101, liel\u0101k\u0101 da\u013ca m\u016bsdien\u0101s p\u0101rdot\u0101 sil\u012bcija karb\u012bda ir sint\u0113tisks. Tas ir daudz\u0101s form\u0101s, s\u0101kot no za\u013ciem l\u012bdz melniem krist\u0101liskiem graudiem un beidzot ar se\u0161collu SiC pl\u0101ksn\u0113m, ko izmanto energoelektronik\u0101, un ir \u0137\u012bmiski inerts, jo ir iztur\u012bgs pret organisko sk\u0101bju un s\u0101rmu koroziju, iz\u0146emot fluor\u016bde\u0146ra\u017esk\u0101bi un s\u0113rsk\u0101bi; ne\u0161\u0137\u012bst \u016bden\u012b vai citos \u0161\u0137\u012bdin\u0101t\u0101jos, bet \u0161\u0137\u012bst izkaus\u0113tos s\u0101rmos, piem\u0113ram, NaOH vai KOH.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) ir pusvad\u012bt\u0101ju materi\u0101ls, kas atrodas starp met\u0101liem (kuri vada elektr\u012bbu) un izolatoriem (kuri elektr\u012bbu nevada). SiC elektrisk\u0101s \u012bpa\u0161\u012bbas ir atkar\u012bgas no temperat\u016bras un piemais\u012bjumiem t\u0101 sast\u0101v\u0101: zem\u0101s temperat\u016br\u0101s tas darbojas k\u0101 izolators, bet augst\u0101k\u0101 temperat\u016br\u0101 t\u0101 elektrovad\u012btsp\u0113ja k\u013c\u016bst paman\u0101ma. SiC vad\u012btsp\u0113ju var v\u0113l vair\u0101k uzlabot, pievienojot alum\u012bnija, bora vai gallija piemais\u012bjumus, kas palielina br\u012bvos l\u0101di\u0146a nes\u0113jus un p\u0101rv\u0113r\u0161 SiC par P tipa pusvad\u012bt\u0101ju.<\/p>\n
M\u0101la fizik\u0101lo un \u0137\u012bmisko \u012bpa\u0161\u012bbu kombin\u0101cija padara to par pievilc\u012bgu materi\u0101lu da\u017e\u0101d\u0101s r\u016bpniec\u012bbas nozar\u0113s, s\u0101kot no keramikas pl\u0101ksn\u0113m, kas palielina nodilumiztur\u012bbu un brem\u017eu iztur\u012bbu, l\u012bdz pat t\u0101 augstajai siltumvad\u012btsp\u0113jai un zemajam izple\u0161an\u0101s koeficientam, kas \u013cauj to izmantot augsttemperat\u016bras lietojumos.<\/p>\n
Turkl\u0101t t\u0101 unik\u0101l\u0101 joslas sprauga \u013cauj tam darboties pie augst\u0101kiem spriegumiem un frekvenc\u0113m nek\u0101 tradicion\u0101lajai elektronikai uz sil\u012bcija b\u0101zes, padarot to par ide\u0101lu materi\u0101lu t\u0101d\u0101m ener\u0123ijas ier\u012bc\u0113m k\u0101 diodes, tranzistori un tiristori.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) ir neorganiska keramika ar izcil\u0101m termiskaj\u0101m \u012bpa\u0161\u012bb\u0101m, kas to padara piem\u0113rotu daudziem da\u017e\u0101diem lietojumiem. Sil\u012bcija karb\u012bds tiek izmantots, s\u0101kot no nodilumiztur\u012bg\u0101m deta\u013c\u0101m un abraz\u012bviem materi\u0101liem, pateicoties t\u0101 ciet\u012bbai, ugunsiztur\u012bgaj\u0101s viel\u0101s un keramik\u0101, pateicoties t\u0101 karstumiztur\u012bbai un zemajai termiskajai izple\u0161an\u0101s sp\u0113jai, k\u0101 ar\u012b elektronik\u0101, kur t\u0101 sp\u0113ja vad\u012bt elektr\u012bbu ekstrem\u0101l\u0101s temperat\u016br\u0101s.<\/p>\n
SiC ir efekt\u012bvs siltumvad\u012bt\u0101js, pateicoties t\u0101 dimanta kubiskajai krist\u0101liskajai strukt\u016brai, kur\u0101 puse atomu ir aizst\u0101ti ar sil\u012bciju, kas nodro\u0161ina izcilu siltumvad\u012btsp\u0113ju. SiC ir efekt\u012bva joslas sprauga, kas \u013cauj elektroniem viegli p\u0101rvietoties starp t\u0101s valences un vad\u012btsp\u0113jas josl\u0101m, sal\u012bdzinot ar izolatoriem, kuriem nepiecie\u0161ams p\u0101rm\u0113r\u012bgs ener\u0123ijas daudzums, lai elektroni var\u0113tu \u0161\u0137\u0113rsot \u0161o plaisu starp josl\u0101m.<\/p>\n
SiC krist\u0101lisk\u0101 strukt\u016bra var b\u016bt da\u017e\u0101da veida, t\u0101 saucamie politipi. Katrs politips sast\u0101v no sl\u0101\u0146iem, kas sak\u0101rtoti \u012bpa\u0161\u0101s sak\u0101rtojuma sec\u012bb\u0101s, kuru rezult\u0101t\u0101 veidojas unik\u0101ls atomu izk\u0101rtojums - tas pie\u0161\u0137ir SiC \u0101rk\u0101rt\u012bgi augstu \u012bpatn\u0113jo siltumu un zemu termisk\u0101s izple\u0161an\u0101s koeficientu.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide, or SiC, is an extremely strong and durable material with some unique electrical properties. Crystalline carbon can be […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[3],"tags":[],"class_list":["post-42","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/42","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/comments?post=42"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/42\/revisions"}],"predecessor-version":[{"id":43,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/posts\/42\/revisions\/43"}],"wp:attachment":[{"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/media?parent=42"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/categories?post=42"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/lv\/wp-json\/wp\/v2\/tags?post=42"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}