{"id":12,"date":"2022-12-21T20:54:38","date_gmt":"2022-12-21T12:54:38","guid":{"rendered":"http:\/\/siliconcarbideceramic.net\/?p=12"},"modified":"2022-12-21T21:03:46","modified_gmt":"2022-12-21T13:03:46","slug":"differents-types-de-ceramiques-en-carbure-de-silicium","status":"publish","type":"post","link":"https:\/\/siliconcarbideceramic.net\/fr\/different-kind-silicon-carbide-ceramic\/","title":{"rendered":"Diff\u00e9rents types de c\u00e9ramiques en carbure de silicium"},"content":{"rendered":"<p>Le processus de pr\u00e9paration du carbure de silicium li\u00e9 par r\u00e9action est relativement simple. Ce type de c\u00e9ramique de carbure de silicium utilise directement du carbure de silicium avec une certaine distribution granulom\u00e9trique, forme des embryons apr\u00e8s m\u00e9lange avec du carbone, puis c\u00e9mente \u00e0 haute temp\u00e9rature. Une partie du silicium r\u00e9agit avec le carbone pour g\u00e9n\u00e9rer du SiC, qui se combine avec le SIC dans l'embryon d'origine pour atteindre l'objectif du frittage. Il existe deux m\u00e9thodes de c\u00e9mentation : l'une consiste \u00e0 atteindre la temp\u00e9rature de fusion du silicium, \u00e0 g\u00e9n\u00e9rer la temp\u00e9rature de fusion du silicium et \u00e0 produire de la vapeur de silicium, L'objectif du frittage est atteint par l'infiltration de vapeur de silicium dans l'embryon. Le co\u00fbt de production du corps fritt\u00e9 SiC pr\u00e9par\u00e9 par ce proc\u00e9d\u00e9 est faible. Cependant, ce proc\u00e9d\u00e9 d\u00e9termine le silicium libre r\u00e9siduel dans l'embryon fritt\u00e9. Cette partie du silicium devrait avoir un impact sur l'application des futurs produits. D'une part, elle r\u00e9duit la solidit\u00e9 et la r\u00e9sistance \u00e0 l'usure du corps fritt\u00e9 et, d'autre part, l'existence de silicium libre rend le carbure de silicium r\u00e9sistant \u00e0 l'acide.<\/p>\n<p>C\u00e9ramique de carbure de silicium sans frittage : le frittage sans pression du carbure de silicium peut \u00eatre divis\u00e9 en frittage en phase solide et frittage en phase liquide. La puret\u00e9 du carbure de silicium fritt\u00e9 sans pression est \u00e9lev\u00e9e, la teneur en carbure de silicium est sup\u00e9rieure \u00e0 97%, la r\u00e9sistance \u00e0 la corrosion acide et alcaline est bien meilleure que celle du carbure de silicium fritt\u00e9 par r\u00e9action, et il est facile de r\u00e9aliser une production par lots.<\/p>\n<p>La c\u00e9ramique de carbure de silicium fritt\u00e9e par pressage \u00e0 chaud est l'une des m\u00e9thodes les plus efficaces pour pr\u00e9parer une c\u00e9ramique de carbure de silicium de haute densit\u00e9. Les propri\u00e9t\u00e9s du carbure de silicium press\u00e9 \u00e0 chaud sont g\u00e9n\u00e9ralement sup\u00e9rieures \u00e0 celles du carbure de silicium fritt\u00e9 par r\u00e9action et du carbure de silicium fritt\u00e9 sans pression, notamment en ce qui concerne la finesse des grains, la compacit\u00e9, la r\u00e9sistance et la duret\u00e9 des produits.<\/p>\n<p>C\u00e9ramique de carbure de silicium fritt\u00e9e par pressage isostatique \u00e0 haute temp\u00e9rature : Le pressage isostatique \u00e0 haute temp\u00e9rature est un proc\u00e9d\u00e9 avanc\u00e9 de frittage de la c\u00e9ramique. La poudre ou l'embryon de c\u00e9ramique est emball\u00e9 et plac\u00e9 dans un dispositif de pressage isostatique \u00e0 chaud \u00e0 haute temp\u00e9rature, puis fritt\u00e9 en un corps dense sous haute temp\u00e9rature et haute pression. Ce proc\u00e9d\u00e9 se caract\u00e9rise par une pressurisation simultan\u00e9e et uniforme, appel\u00e9e HIP.<\/p>\n<p>C\u00e9ramiques de carbure de silicium recristallis\u00e9es : apr\u00e8s le m\u00e9lange, la mise en forme et le s\u00e9chage, les mati\u00e8res premi\u00e8res sont cuites dans un four \u00e9lectrique \u00e0 haute temp\u00e9rature isol\u00e9 de l'air \u00e0 2300~2500 \u2103. Lorsque la temp\u00e9rature d\u00e9passe 2100 \u2103, le carbure de silicium s'\u00e9vapore et se condense, ce qui entra\u00eene la formation de c\u00e9ramiques de carbure de silicium recristallis\u00e9es sans retrait de frittage et avec une structure auto-liante.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-15 aligncenter\" src=\"http:\/\/siliconcarbideceramic.net\/wp-content\/uploads\/2022\/12\/silicon-carbide-ceramic.jpg\" alt=\"c\u00e9ramique de carbure de silicium\" width=\"420\" height=\"254\" srcset=\"https:\/\/siliconcarbideceramic.net\/wp-content\/uploads\/2022\/12\/silicon-carbide-ceramic.jpg 420w, https:\/\/siliconcarbideceramic.net\/wp-content\/uploads\/2022\/12\/silicon-carbide-ceramic-300x181.jpg 300w\" sizes=\"auto, (max-width: 420px) 100vw, 420px\" \/><\/p>","protected":false},"excerpt":{"rendered":"<p>The preparation process of reaction bonded silicon carbide is relatively simple. this kind silicon carbide ceramic directly uses silicon carbide [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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