{"id":12,"date":"2022-12-21T20:54:38","date_gmt":"2022-12-21T12:54:38","guid":{"rendered":"http:\/\/siliconcarbideceramic.net\/?p=12"},"modified":"2022-12-21T21:03:46","modified_gmt":"2022-12-21T13:03:46","slug":"forskellige-slags-siliciumkarbidkeramik","status":"publish","type":"post","link":"https:\/\/siliconcarbideceramic.net\/da\/different-kind-silicon-carbide-ceramic\/","title":{"rendered":"forskellige slags siliciumkarbidkeramik"},"content":{"rendered":"<p>Fremstillingsprocessen for reaktionsbundet siliciumkarbid er forholdsvis enkel. Denne type siliciumkarbidkeramik anvender direkte siliciumkarbid med en bestemt partikelst\u00f8rrelsesfordeling, danner emner efter blanding med kulstof og gennemg\u00e5r derefter en karburering ved h\u00f8j temperatur. En del af siliciumet reagerer med kulstof og danner SiC, som forbinder sig med SiC i den oprindelige form for at opn\u00e5 form\u00e5let med sintringen. Der findes to karboniseringsmetoder: Den ene g\u00e5r ud p\u00e5 at n\u00e5 siliciums smeltetemperatur, generere siliciumdamp, og form\u00e5let med sintringen opn\u00e5s ved, at siliciumdampen tr\u00e6nger ind i emnet. Produktionsomkostningerne for et SiC-sintret emne fremstillet ved denne proces er lave. Denne proces bestemmer imidlertid m\u00e6ngden af resterende frit silicium i den sintrede emne. Denne andel af silicium b\u00f8r have indflydelse p\u00e5 anvendelsen af fremtidige produkter. P\u00e5 den ene side reducerer det det sintrede legemets styrke og slidstyrke, og p\u00e5 den anden side g\u00f8r tilstedev\u00e6relsen af frit silicium siliciumkarbid syrebestandigt.<\/p>\n<p>Sintringsfri siliciumkarbidkeramik: Trykl\u00f8s sintring af siliciumkarbid kan opdeles i fastfasesintring og v\u00e6skefasesintring. Renheden af trykl\u00f8st sintret siliciumkarbid er h\u00f8j, indholdet af siliciumkarbid er over 97%, modstandsdygtigheden over for syre- og alkalikorrosion er langt bedre end for reaktionssintret siliciumkarbid, og det er let at opn\u00e5 serieproduktion.<\/p>\n<p>Varmpresning af siliciumkarbidkeramik er en af de mest effektive metoder til fremstilling af siliciumkarbidkeramik med h\u00f8j densitet. Egenskaberne ved varmpresset siliciumkarbid er generelt bedre end ved reaktionssintreret og trykfrit sintreret siliciumkarbid, is\u00e6r hvad ang\u00e5r de fine korn, den h\u00f8je kompakthed samt produkternes h\u00f8je styrke og h\u00e5rdhed.<\/p>\n<p>Sintring af siliciumkarbidkeramik ved h\u00f8jtemperatur-isostatisk presning: H\u00f8jtemperatur-isostatisk presning er en avanceret keramisk sintringsproces. Det keramiske pulver eller den keramiske form pakkes og anbringes i et anl\u00e6g til isostatisk presning ved h\u00f8j temperatur, hvorefter det sintres til et t\u00e6t legeme under h\u00f8j temperatur og h\u00f8jt tryk. Processen er kendetegnet ved samtidig og ensartet trykp\u00e5f\u00f8ring, ogs\u00e5 kaldet HIP.<\/p>\n<p>Rekrystalliseret siliciumkarbidkeramik: Efter blanding, formning og t\u00f8rring br\u00e6ndes r\u00e5materialerne i en luftisoleret elektrisk h\u00f8jtemperaturovn ved 2300\u20132500 \u2103. N\u00e5r temperaturen overstiger 2100 \u2103, fordamper og kondenserer siliciumcarbid, hvilket resulterer i dannelsen af omkrystalliseret siliciumcarbidkeramik uden sintringskrympning og med en selvbindende struktur.<\/p>\n<p><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-15 aligncenter\" src=\"http:\/\/siliconcarbideceramic.net\/wp-content\/uploads\/2022\/12\/silicon-carbide-ceramic.jpg\" alt=\"keramik af siliciumkarbid\" width=\"420\" height=\"254\" srcset=\"https:\/\/siliconcarbideceramic.net\/wp-content\/uploads\/2022\/12\/silicon-carbide-ceramic.jpg 420w, https:\/\/siliconcarbideceramic.net\/wp-content\/uploads\/2022\/12\/silicon-carbide-ceramic-300x181.jpg 300w\" sizes=\"auto, (max-width: 420px) 100vw, 420px\" \/><\/p>","protected":false},"excerpt":{"rendered":"<p>The preparation process of reaction bonded silicon carbide is relatively simple. this kind silicon carbide ceramic directly uses silicon carbide [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center 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