Karbid k\u0159em\u00edku je um\u011bl\u00e1 slou\u010denina k\u0159em\u00edku a uhl\u00edku, kter\u00e1 m\u00e1 v\u00fdjime\u010dn\u00e9 elektrick\u00e9 a tepeln\u011b odoln\u00e9 vlastnosti.<\/p>\n
Odolnost proti teplotn\u00edm \u0161ok\u016fm p\u0159edur\u010duje tento materi\u00e1l k pou\u017eit\u00ed ve v\u00fdkonov\u00fdch polovodi\u010d\u00edch a infrastruktu\u0159e pro nab\u00edjen\u00ed elektrick\u00fdch vozidel, kde zaji\u0161\u0165uje p\u0159echodn\u00e9 mechanick\u00e9 zat\u00ed\u017een\u00ed zp\u016fsoben\u00e9 n\u00e1hl\u00fdmi zm\u011bnami teploty. Tato vlastnost z n\u011bj d\u011bl\u00e1 ide\u00e1ln\u00ed volbu materi\u00e1lu, pokud se uva\u017euje o odolnosti proti teplotn\u00edm \u0161ok\u016fm jako po\u017eadavku pro pou\u017eit\u00ed.<\/p>\n
Vysok\u00e1 tepeln\u00e1 vodivost desti\u010dek z karbidu k\u0159em\u00edku (SiC) je p\u0159edur\u010duje k pou\u017eit\u00ed v elektronick\u00fdch za\u0159\u00edzen\u00edch, kter\u00e1 pracuj\u00ed p\u0159i vysok\u00e9 teplot\u011b i nap\u011bt\u00ed, jako jsou v\u00fdkonov\u00e9 polovodi\u010de pou\u017e\u00edvan\u00e9 v elektrick\u00fdch vozidlech nebo v technologii 5G, nebo vysokorychlostn\u00ed senzory. Schopnost odol\u00e1vat drsn\u00fdm podm\u00ednk\u00e1m, jako jsou ty, kter\u00e9 se vyskytuj\u00ed v letectv\u00ed a kosmonautice, odli\u0161uje SiC od jin\u00fdch materi\u00e1l\u016f pro v\u00fdrobu desti\u010dek.<\/p>\n
V\u00fdroba SiC desti\u010dek vy\u017eaduje n\u011bkolik kritick\u00fdch krok\u016f. Nejprve se monokrystalick\u00e9 ingoty roz\u0159e\u017eou na tenk\u00e9 pl\u00e1tky pomoc\u00ed p\u0159esn\u00e9 pily. Pot\u00e9 se tyto desti\u010dky podrob\u00ed chemick\u00e9 a mechanick\u00e9 \u00faprav\u011b, aby se dos\u00e1hlo rovnom\u011brn\u00e9ho povrchu a tlou\u0161\u0165ky, a pak slou\u017e\u00ed jako z\u00e1klad pro fotolitografii, lept\u00e1n\u00ed a nan\u00e1\u0161en\u00ed, kter\u00e9 vytv\u00e1\u0159ej\u00ed polovodi\u010dov\u00e9 sou\u010d\u00e1stky.<\/p>\n
In\u017een\u00fdrstv\u00ed a v\u00fdzkum jsou v tomto procesu z\u00e1sadn\u00ed, zejm\u00e9na proto, \u017ee karbid k\u0159em\u00edku je mnohem tvrd\u0161\u00ed ne\u017e jeho k\u0159em\u00edkov\u00fd ekvivalent, a proto jeho \u0159ez\u00e1n\u00ed trv\u00e1 podstatn\u011b d\u00e9le ne\u017e \u0159ez\u00e1n\u00ed k\u0159em\u00edkov\u00e9ho ekvivalentu. Metody kr\u00e1jen\u00ed je proto t\u0159eba pe\u010dliv\u011b kalibrovat.<\/p>\n
V sou\u010dasn\u00e9 dob\u011b je k dispozici v\u00edce metod v\u00fdroby vysoce kvalitn\u00edch SiC desti\u010dek. Jednou z t\u011bchto metod je laserov\u00e9 \u0159ez\u00e1n\u00ed; tento p\u0159\u00edstup se osv\u011bd\u010dil zejm\u00e9na u velk\u00fdch a tvrd\u00fdch materi\u00e1l\u016f, jako je SiC; tento proces v\u0161ak m\u016f\u017ee b\u00fdt n\u00e1kladn\u00fd a vy\u017eaduje zna\u010dn\u00e9 technick\u00e9 \u00fasil\u00ed pro \u00fasp\u011b\u0161nou realizaci.<\/p>\n
Karbid k\u0159em\u00edku p\u0159in\u00e1\u0161\u00ed revoluci do v\u00fdkonov\u00e9 elektroniky. D\u00edky sv\u00e9 schopnosti odol\u00e1vat vysok\u00fdm teplot\u00e1m a nap\u011bt\u00edm se tyto desti\u010dky staly z\u00e1kladn\u00edmi sou\u010d\u00e1stmi elektromobil\u016f a syst\u00e9m\u016f obnoviteln\u00fdch zdroj\u016f energie. Jejich \u0161irok\u00fd p\u00e1sov\u00fd rozd\u00edl jim umo\u017e\u0148uje pracovat s vy\u0161\u0161\u00edmi frekvencemi ne\u017e tradi\u010dn\u00ed polovodi\u010dov\u00e9 materi\u00e1ly.<\/p>\n
SiC je extr\u00e9mn\u011b tvrd\u00fd keramick\u00fd materi\u00e1l, kter\u00fd je navr\u017een tak, aby odol\u00e1val extr\u00e9mn\u00edm teplot\u00e1m a z\u00e1rove\u0148 byl odoln\u00fd v\u016f\u010di chemick\u00fdm vliv\u016fm, co\u017e z n\u011bj \u010din\u00ed ide\u00e1ln\u00ed materi\u00e1l pro pou\u017eit\u00ed v perifern\u00edch oh\u0159\u00edva\u010d\u00edch a polovodi\u010dov\u00fdch pec\u00edch. Jeho odolnost proti teplotn\u00edm \u0161ok\u016fm nav\u00edc pom\u00e1h\u00e1 omezit po\u0161kozen\u00ed zp\u016fsoben\u00e9 n\u00e1hl\u00fdmi zm\u011bnami teploty.<\/p>\n
Karbid k\u0159em\u00edku nab\u00edz\u00ed v\u00edce ne\u017e jen odolnost proti teplotn\u00edm \u0161ok\u016fm; vyzna\u010duje se tak\u00e9 n\u00edzk\u00fdm koeficientem tepeln\u00e9 rozta\u017enosti, co\u017e znamen\u00e1, \u017ee jeho rozta\u017enost a smr\u0161\u0165ov\u00e1n\u00ed prob\u00edh\u00e1 zhruba stejnou rychlost\u00ed, tak\u017ee jeho rozm\u011bry z\u016fst\u00e1vaj\u00ed za extr\u00e9mn\u00edch podm\u00ednek stejn\u00e9. D\u00edky t\u00e9to vlastnosti je karbid k\u0159em\u00edku ide\u00e1ln\u00ed pro v\u00fdrobu mal\u00fdch za\u0159\u00edzen\u00ed, kter\u00e1 obsahuj\u00ed v\u00edce tranzistor\u016f na jednom \u010dipu.<\/p>\n
Materi\u00e1l karbidu k\u0159em\u00edku lze vyr\u00e1b\u011bt bu\u010f sp\u00e9k\u00e1n\u00edm elektrick\u00fdm obloukem p\u0159i vysok\u00fdch teplot\u00e1ch ve vakuov\u00e9 peci, nebo chemickou depozic\u00ed z par (CVD), p\u0159i n\u00ed\u017e specializovan\u00e9 plyny vstupuj\u00ed do vakuov\u00e9ho prost\u0159ed\u00ed a spojuj\u00ed se za vzniku krychlov\u00fdch krystal\u016f karbidu k\u0159em\u00edku, kter\u00e9 se pak nan\u00e1\u0161ej\u00ed na substr\u00e1ty bu\u010f pomoc\u00ed suspenze, nebo diamantov\u00fdch n\u00e1stroj\u016f.<\/p>\n
Karbid k\u0159em\u00edku m\u00e1 v\u00fdjime\u010dn\u00e9 elektrick\u00e9 a tepeln\u00e9 vlastnosti, kter\u00e9 z n\u011bj \u010din\u00ed ide\u00e1ln\u00ed materi\u00e1l pro aplikace v oblasti v\u00fdkonov\u00e9 elektroniky. D\u00edky \u0161irok\u00e9mu p\u00e1smu odol\u00e1vaj\u00ed vy\u0161\u0161\u00edm teplot\u00e1m a nap\u011bt\u00edm ne\u017e jin\u00e9 polovodi\u010dov\u00e9 materi\u00e1ly a jejich vysok\u00e1 pohyblivost elektron\u016f jim nav\u00edc umo\u017e\u0148uje efektivn\u011bji zpracov\u00e1vat v\u011bt\u0161\u00ed proudy, co\u017e vede k rychlej\u0161\u00ed odezv\u011b a vy\u0161\u0161\u00ed hustot\u011b energie.<\/p>\n
V\u00fdroba SiC desti\u010dek za\u010d\u00edn\u00e1 s monokrystalick\u00fdmi ingoty vysoce \u010dist\u00e9ho saf\u00edru, germania nebo k\u0159em\u00edku. Po roz\u0159ez\u00e1n\u00ed na tenk\u00e9 pl\u00e1tky p\u0159esnou pilou projdou tyto ingoty n\u011bkolika chemick\u00fdmi a mechanick\u00fdmi procesy, aby se dos\u00e1hlo rovn\u00e9ho a hladk\u00e9ho povrchu, kter\u00fd slou\u017e\u00ed jako pl\u00e1tno, na n\u011bm\u017e se formuj\u00ed za\u0159\u00edzen\u00ed, jako je fotolitografie, lept\u00e1n\u00ed a nan\u00e1\u0161en\u00ed.<\/p>\n
Karbid k\u0159em\u00edku je chemick\u00e1 slou\u010denina slo\u017een\u00e1 z \u010dist\u00e9ho k\u0159em\u00edku a uhl\u00edku, kter\u00e1 m\u016f\u017ee b\u00fdt dopov\u00e1na dus\u00edkem nebo fosforem pro v\u00fdrobu polovodi\u010d\u016f typu n nebo galliem, hlin\u00edkem nebo b\u00f3rem pro v\u00fdrobu polovodi\u010d\u016f typu p. D\u00edky sv\u00e9 odolnosti v\u016f\u010di korozi, n\u00edzk\u00e9mu bodu t\u00e1n\u00ed a tepeln\u00e9 stabilit\u011b lze PEEK vyu\u017e\u00edt v mnoha pr\u016fmyslov\u00fdch aplikac\u00edch - od podp\u011br a lopatek pro podnosy na desti\u010dky pro polovodi\u010dov\u00e9 pece a\u017e po podp\u011bry a lopatky pou\u017e\u00edvan\u00e9 jako mechanismy pro p\u0159enos desti\u010dek. V\u00fdjime\u010dn\u00e1 pevnost a odolnost karbidu k\u0159em\u00edku z n\u011bj \u010din\u00ed ide\u00e1ln\u00ed materi\u00e1l pro pou\u017eit\u00ed v za\u0159\u00edzen\u00edch pro regulaci teploty a nap\u011bt\u00ed, jako jsou termistory a varistory. Krom\u011b toho tento vysoce odoln\u00fd materi\u00e1l dob\u0159e odol\u00e1v\u00e1 radiaci i chemick\u00fdm \u00fatok\u016fm - tyto vlastnosti vedly k jeho \u0161irok\u00e9mu roz\u0161\u00ed\u0159en\u00ed v energetick\u00fdch aplikac\u00edch, jako jsou elektromobily a nab\u00edjec\u00ed infrastruktura.<\/p>\n
Karbid k\u0159em\u00edku odol\u00e1v\u00e1 extr\u00e9mn\u00edm teplot\u00e1m a nap\u011bt\u00edm, co\u017e z n\u011bj \u010din\u00ed vynikaj\u00edc\u00ed volbu pro elektronick\u00e1 za\u0159\u00edzen\u00ed, kter\u00e1 vy\u017eaduj\u00ed vysok\u00fd v\u00fdkon v n\u00e1ro\u010dn\u00fdch prost\u0159ed\u00edch, jako jsou elektromobily, konverze sol\u00e1rn\u00ed energie, bezdr\u00e1tov\u00e9 technologie 5G nebo leteck\u00e1 elektronika.<\/p>\n
Desti\u010dky z karbidu k\u0159em\u00edku (SiC) se vyr\u00e1b\u011bj\u00ed z monokrystalick\u00fdch ingot\u016f saf\u00edru, germania nebo k\u0159em\u00edku, kter\u00e9 se pomoc\u00ed p\u0159esn\u00fdch pil roz\u0159e\u017eou na desti\u010dky. Po vyle\u0161t\u011bn\u00ed a \u00faprav\u011b pomoc\u00ed chemick\u00fdch a mechanick\u00fdch proces\u016f pro dosa\u017een\u00ed rovnom\u011brn\u00e9ho povrchu a rovnom\u011brn\u00e9 tlou\u0161\u0165ky se SiC desti\u010dky st\u00e1vaj\u00ed ide\u00e1ln\u00edmi kandid\u00e1ty pro fotolitografick\u00e9 zpracov\u00e1n\u00ed, lept\u00e1n\u00ed nebo depozi\u010dn\u00ed procesy.<\/p>\n
Desky SiC jsou p\u0159i v\u00fdrob\u011b vystaveny siln\u00e9mu nam\u00e1h\u00e1n\u00ed a n\u00e1raz\u016fm. Vzhledem k jeho k\u0159ehk\u00e9 povaze je t\u0159eba p\u0159i manipulaci s t\u00edmto materi\u00e1lem dodr\u017eovat bezpe\u010dnostn\u00ed opat\u0159en\u00ed; pracovn\u00edci by nap\u0159\u00edklad m\u011bli nosit ochrann\u00e9 pom\u016fcky, aby se zabr\u00e1nilo vdechnut\u00ed prachu a kontaminaci.<\/p>\n
SiC je \u0161irokop\u00e1smov\u00fd polovodi\u010dov\u00fd materi\u00e1l, kter\u00fd nab\u00edz\u00ed lep\u0161\u00ed teplotn\u00ed a frekven\u010dn\u00ed vlastnosti ne\u017e b\u011b\u017en\u00e9 k\u0159em\u00edkov\u00e9 sou\u010d\u00e1stky. D\u00edky tomu je SiC atraktivn\u00ed materi\u00e1l pro spole\u010dnosti, jako jsou ON Semiconductor (ON) a Wolfspeed (WOLF), kter\u00e9 vyr\u00e1b\u011bj\u00ed v\u00fdkonov\u00e9 polovodi\u010de na substr\u00e1tech z karbidu k\u0159em\u00edku.<\/p>\n
Kvalita desti\u010dek hraje z\u00e1sadn\u00ed roli p\u0159i jejich vhodnosti pro r\u016fzn\u00e9 aplikace. T\u0159\u00edd\u011bn\u00ed desti\u010dek z karbidu k\u0159em\u00edku - Prime a Research - stanovuje prahov\u00e9 hodnoty v\u00fdkonu, kter\u00fdch mus\u00ed dos\u00e1hnout, aby pomohly in\u017een\u00fdr\u016fm dos\u00e1hnout po\u017eadovan\u00fdch v\u00fdsledk\u016f. Desti\u010dky t\u0159\u00eddy Prime se vyzna\u010duj\u00ed n\u00edzkou hustotou defekt\u016f a hustotou mikrotrubi\u010dek, co\u017e zaru\u010duje minimum nedokonalost\u00ed, kter\u00e9 by mohly nap\u0159\u00edklad zm\u011bnit funk\u010dnost za\u0159\u00edzen\u00ed.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide wafer is an artificial compound of silicon and carbon that offers exceptional electrical and heat resistant properties. Thermal […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"default","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"footnotes":""},"categories":[3],"tags":[],"class_list":["post-88","post","type-post","status-publish","format-standard","hentry","category-sic-knowledge"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/posts\/88","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/comments?post=88"}],"version-history":[{"count":1,"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/posts\/88\/revisions"}],"predecessor-version":[{"id":89,"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/posts\/88\/revisions\/89"}],"wp:attachment":[{"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/media?parent=88"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/categories?post=88"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/siliconcarbideceramic.net\/cs\/wp-json\/wp\/v2\/tags?post=88"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}