Silicon carbide, commonly referred to as silicon carbide, occurs naturally as the gemstone moissanite. Since 1893 it has been mass produced as an abrasive and its semiconducting properties make it valuable in many electronics applications.
Calcium carbonate’s sharp, angular particles make it an excellent abrasive for rock tumbling and gem cutting, plus its affordability makes it economical and reusable.
Abraziv
SiC is used in various abrasive materials such as grinding wheels, sandpaper and abrasives, serving as the main choice in modern lapidary due to its hardness and durability. Furthermore, SiC can also be used to prepare refractory bricks and furnace linings for nonferrous metal production; while its acid and alkali resistance make it an invaluable material in chemical industries.
Sintered ceramics made of this material can be sintered to form hard and resilient materials that are used in applications that demand high endurance such as car brakes and clutches, ceramic plates embedded in bulletproof vests, polishing agent for fiber-optic ends prior to splicing, polishing agent on fiber ends prior to splicing as well as components found within modern electric vehicles to enable DC fast charging capabilities and improve thermal efficiency as well as power electronic devices due to corrosion-resistance and high temperature capabilities.
Refractar
Refractory materials are used in demanding industrial applications that demand robust protective linings, such as furnaces and kilns, chemical processing equipment, etc. Refractory products provide strong mechanical structures, corrosion protection, thermal insulation properties, as well as strong mechanical structures for corrosion prevention.
Silicon carbide is ideal for use in refractory applications due to its resistance to both chemicals and high temperatures, withstanding temperatures up to 1,800 degrees Fahrenheit without succumbing to chemical attack from acids or alkalis, making it the perfect material choice.
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Electronics
Silicon carbide semiconductors are often employed to amplify, switch and convert electrical signals. Their crystalline structure enables doping with impurities like aluminum, gallium and nitrogen for P-type or N-type semiconductor devices, which allow it to operate at much higher temperatures, voltages and frequencies than traditional silicon semiconductors.
SiC semiconductors’ higher breakdown voltage allows power electronic switches made with them to be smaller, making them ideal for applications involving high voltage environments like electric vehicle charging systems or high-voltage environments that must handle higher-voltage environments.
SiC transistors typically can withstand 10 times more electric fields than their silicon semiconductor counterparts, leading to significantly decreased risk of erratic conduction behavior and potentially catastrophic failure, along with less power loss. All these advantages make SiC semiconductors ideal for high-voltage applications such as electric vehicle (EV) chargers, solar power inverters and sensor systems.
Automotive
Silicon carbide (SiC) has quickly become one of the premier materials for use in electric vehicle (EV) inverter systems. Offering superior operating temperatures up to 300degC compared with silicon’s 175degC limit, SiC provides greater efficiency, reliability and range when applied in EV applications.
SiC is a nonoxide ceramic used in mechanically and thermally demanding applications due to its hardness; in refractories for its resistance against high heat and shock; and electronics for use in devices operating at either high temperatures or voltages or both. SiC ranks second only to boron carbide and diamond as one of the hardest known natural substances.
Carborundum grit can also be utilized in carborundum printmaking – an artform in which ink trapped between textured aluminum plates creates painted marks on paper. American Elements offers SiC grade options when applicable such as Mil Spec, ACS Reagent Grade and USP EP/BP specifications for these applications.